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¹Laboratoire de Physique Théorique, Faculté des Sciences Exactes, Université de Bejaia, 06000 Bejaia, Algérie
²Faculty of Physics and CENIDE, University of Duisburg-Essen, D-47053 Duisburg, Germany
³Peter Grünberg Institut, Forschungszentrum Jülich and JARA, D-52425 Jülich, Germany
⁴Centro S3, Istituto Nanoscienze—Consiglio Nazionale delle Ricerche (CNR-NANO), via Campi 213/A, 41125 Modena, Italy
⁵European Theoretical Spectroscopy Facility (ETSF)
⁶Dipartimento di Fisica, Università di Roma ‘Tor Vergata,’ Via della Ricerca Scientifica 1, I-00133 Roma, Italy
⁷Institute for Theoretical Physics, Heidelberg University, 69120 Heidelberg, Germany
⁸Institute of Physics, Martin-Luther-University Halle-Wittenberg, 06099 Halle (Saale), Germany

^*Contact author: widad.louafi@univ-bejaia.dz

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Articles Citing

Influence of interlayer stacking on optical behavior in ${WSe}_{2} / {MoS}_{2}$ van der Waals heterostructures

Thickness-engineered GaN enables enhanced photovoltaic performance in Janus MoSSe/GaN heterostructure

Tunable type-II band alignment in MoS2/WSe2 van der Waals heterobilayers under external stimuli for solar energy conversion

Electronic structure and elastic response of WSe2/MoS2 van der Waals heterostructures: Effects of stacking

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Articles Citing

Influence of interlayer stacking on optical behavior in WSe2/MoS2 van der Waals heterostructures

Thickness-engineered GaN enables enhanced photovoltaic performance in Janus MoSSe/GaN heterostructure

Tunable type-II band alignment in MoS2/WSe2 van der Waals heterobilayers under external stimuli for solar energy conversion

Electronic structure and elastic response of WSe2/MoS2 van der Waals heterostructures: Effects of stacking

Influence of interlayer stacking on optical behavior in ${WSe}_{2} / {MoS}_{2}$ van der Waals heterostructures