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Magnetic-field-driven phase switching in the antiferromagnetic Mott insulator
Phys. Rev. B 114, 185134 – Published 30 September, 2026
DOI: https://doi.org/10.1103/z696-28zn
Abstract
A bandwidth-controlled antiferromagnetic Mott-insulating phase in is realized through isovalent substitution of the Ru site. For a dilute substitution with only 1% Ti, the Mott insulator ground state remains nearly degenerate with the ground state of pristine , where the Ru moments are ferromagnetically aligned within the metallic bilayers, which are stacked in an antiferromagnetic fashion. The exceptionally shallow free-energy landscape of this doped compound arises from intertwined electron–electron and electron–lattice interactions. This makes its magnetic and transport properties highly sensitive to external perturbations. We systematically investigated magnetic-field-induced phase switching in to explore its magnetic phase diagram. With the field applied along the easy axis, parallel to the antiferromagnetic moments, the magnetization exhibits a first-order spin-flop transition at , indicating reorientation of the moments perpendicular to the field. The transition is accompanied by a decrease in the electrical resistance, but the spin-flop phase remains insulating. Above , all Ru moments align with the axis, resulting in a forced ferromagnetic metallic phase. In contrast, neither spin-flop nor forced ferromagnetic phases are observed up to when the field is applied along the axis. While the electronic kinetic energy and the electron–lattice coupling contribute to the free-energy balance of this system, the resulting phase diagram is remarkably simple and closely resembles that of a canonical anisotropic antiferromagnet, albeit with substantially renormalized critical fields.
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