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    Sub-spin-flop switching of a fully compensated antiferromagnet by magnetic field

    Honglin Zhou1,2, Muyu Wang1,2, Yinina Ma1, Xiaoyan Ma1,2, Gang Li1, Zihao Tao3, Xiquan Zheng3, Liqin Yan1,2, Yingying Peng3 et al.

    Ding-Fu Shao4,*, Bo Liu1,†, and Shiliang Li1,2,‡

    • *Contact author: dfshao@issp.ac.cn
    • †Contact author: liubo@iphy.ac.cn
    • ‡Contact author: slli@iphy.ac.cn

    Phys. Rev. B 114, 154411 – Published 11 September, 2026

    DOI: https://doi.org/10.1103/tr4x-lmlg

    Abstract

    The control of antiferromagnets by magnetic fields represents a fundamental challenge in condensed matter physics, owing to their fully compensated magnetic order and vanishing net magnetization. Conventional methods rely on either uncompensated moments or high-field spin-flop transitions. Here, we demonstrate low-field switching in the fully compensated antiferromagnet CeNiAsO—a material recently proposed as a candidate for p-wave magnetism. Using an in-plane magnetic field well below the spin-flop threshold, we selectively stabilize one of two degenerate antiferromagnetic domains with mutually orthogonal sublattice orientations. This field-induced domain selection allows reversible and nonvolatile switching of a giant in-plane resistivity anisotropy up to ∼35%—a magnitude that far exceeds conventional anisotropy signals driven by spin-orbit coupling. The switching behavior persists across both the low-temperature noncollinear Néel phase and the higher-temperature collinear spin-density-wave phase, highlighting the universality of the domain-selection mechanism. Our work establishes an approach for manipulating compensated antiferromagnets with modest magnetic fields and underscores their potential for high-performance spintronic devices based on giant and switchable resistivity anisotropy.

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