We report a systematic investigation of the physical properties and Fermi-surface topology of layered single-crystal ${\mathrm{SrCu}}_4{\mathrm{As}}_2$ using electrical transport, magnetotransport, and quantum-oscillation experiments plus band-structure calculations. The temperature-dependent electrical resistivity reveals a hysteretic phase transition at $T_P=59$ K, most likely associated with a structural change. Hall resistivity data suggest a marked change in the average hole density resulting from the latter phase transition near $T_P$. A large, linear, and nonsaturating magnetoresistance is observed at low temperatures in ${\mathrm{SrCu}}_4{\mathrm{As}}_2$, likely attributable to the multipocket Fermi surface. Quantum-oscillation data measured in magnetic fields of up to 60 T show several oscillation frequencies exhibiting low effective masses, indicating the presence of Dirac-like band dispersion in ${\mathrm{SrCu}}_4{\mathrm{As}}_2$, as suggested by the band structure calculations.

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• First-principles calculations
• High magnetic fields
• Magnetotransport
• Topological materials
• Dirac semimetal
• Electronic structure
• Quantum oscillation techniques
• Resistivity measurements