Charge creation via quantum tunneling, i.e., dielectric breakdown, is one of the most fundamental and significant phenomena arising from strong light(field)-matter coupling. In this work, we conduct a systematic numerical analysis of quantum tunneling in one-dimensional Mott insulators described by the extended $\left(U\text{−}V\right)$ Hubbard model. We discuss the applicability of the analytical formula for doublon-holon (DH) pair production, previously derived for the one-dimensional Hubbard model, which highlights the relationship between the tunneling threshold, the charge gap, and the correlation length. We test the formula's ability to predict both DH pair production and energy increase rate. Using tensor-network-based approaches, we demonstrate that the formula provides accurate predictions in the absence of excitonic states facilitated by the nearest-neighbor interaction $V$. However, when excitonic states emerge, the formula more accurately describes the rate of energy increase than the DH pair creation rate and in both cases gets improved by incorporating the exciton energy as the effective gap.

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• Carrier generation & recombination
• Critical field
• Density matrix renormalization group
• Doublon
• Electric field effects
• Excitons
• Holon
• Quasiparticles & collective excitations
• Strongly correlated systems
• Extended Hubbard model
• Hubbard model
• Matrix product states
• Tensor network methods