We determine the thermal melting phase diagram of the electron solid by measuring the onset density of the double-threshold voltage-current curves in the insulating state in the ultra-high-mobility two-dimensional electron system in SiGe/Si/SiGe quantum wells at different temperatures in perpendicular magnetic fields. The introduction of a magnetic field leads to a considerable increase in the onset density, which is strongest at the lowest temperatures and decreases with increasing temperature, and the melting temperature increases with magnetic field. These data are in agreement with theoretical predictions. Unexpectedly, the melting temperature as a function of electron density in a fixed magnetic field reveals a plateau, which can be interpreted in terms of resonance modes in the crystallites.

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• Electrical properties
• Magnetotransport
• Quantum wells
• Semiconductor compounds
• Two-dimensional electron gas
• Hall bar
• Resistivity measurements