The layer Hall effect is usually revealed by applying out-of-plane electric fields and electrostatic gating in fully compensated A-type antiferromagnetic layered systems. Here, we theoretically demonstrate that the bilayer system of noncompensated A-type antiferromagnetic ${\mathrm{MnBi}}_2{\mathrm{Te}}_4/{\mathrm{NiBi}}_2{\mathrm{Te}}_4$ heterostructures provides an intrinsic platform to host a spontaneously polarized layer Hall effect. By extending to multilayers, we show that different stacking configurations enable the realization of a nearly quantized layer Hall effect and quantum anomalous Hall effect. These findings make ${\mathrm{MnBi}}_2{\mathrm{Te}}_4/{\mathrm{NiBi}}_2{\mathrm{Te}}_4$ heterostructures a versatile platform for engineering various Hall states in antiferromagnetic van der Waals systems.

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• Electronic structure
• Quantum anomalous Hall effect
• Topological materials
• First-principles calculations