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    Effect of valence electron state and magnetic domain wall movement on magnetization of tellurides

    Z. Z. Li1,*, W. H. Qi1,*, L. Ma1, G. D. Tang1,2,†, and F. X. Hu2

    • *These authors contributed equally to this work.
    • †Contact author: tanggd@hebtu.edu.cn

    Phys. Rev. B 112, 214451 – Published 24 December, 2025

    DOI: https://doi.org/10.1103/nhyt-z4ym

    Abstract

    Based on the x-ray photoelectron spectra experimental results of tellurides reported in the literature, it is found that in tellurides, in addition to Te2− (5s25p6) anions, there are also Te1− (5s25p5) anions. The average chemical valences of Te and cations in Cr3Te4, Cr5Te8, and FeCr2Te4 single-crystal materials are then estimated. Using these average chemical valences and an O 2p itinerant electron model for magnetic oxides, the magnetic ordering mechanism of these three telluride samples is discussed. At the same time, for these single-crystal magnetic materials subjected to a magnetic field along the easy magnetization direction, the effect of magnetic domain wall movement on the magnetization is taken into account.

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