Effect of valence electron state and magnetic domain wall movement on magnetization of tellurides
Phys. Rev. B 112, 214451 – Published 24 December, 2025
DOI: https://doi.org/10.1103/nhyt-z4ym
Abstract
Based on the x-ray photoelectron spectra experimental results of tellurides reported in the literature, it is found that in tellurides, in addition to () anions, there are also () anions. The average chemical valences of Te and cations in , , and single-crystal materials are then estimated. Using these average chemical valences and an O itinerant electron model for magnetic oxides, the magnetic ordering mechanism of these three telluride samples is discussed. At the same time, for these single-crystal magnetic materials subjected to a magnetic field along the easy magnetization direction, the effect of magnetic domain wall movement on the magnetization is taken into account.