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Time-dependent terahertz dielectric function of ZnTe under two-photon optical excitation at 800 nm wavelength

Farell Keiser1,2,*, Wentao Zhang1, Dominik Johannesmann1, Nicolas S. Beermann1, Yuhao Meng1, Hassan A. Hafez1, Savio Fabretti1, and Dmitry Turchinovich1,†

  • 1Fakultät für Physik, Universität Bielefeld, Universitätsstraße 25, 33615 Bielefeld, Germany
  • 2Gymnasium Leopoldinum, Hornsche Straße 48, 32756 Detmold, Germany

  • *Contact author: fkeiser@physik.uni-bielefeld.de
  • †Contact author: dmtu@physik.uni-bielefeld.de

Phys. Rev. B 114, 235205 – Published 14 October, 2026

DOI: https://doi.org/10.1103/myht-1qb7

Abstract

ZnTe is arguably the most widely used nonlinear crystal for the generation and detection of terahertz radiation, used in conjunction with sub-bandgap optical excitation by femtosecond lasers operating near 800 nm. The terahertz dielectric function of ZnTe is the key parameter defining the efficiency and bandwidth of terahertz generation and detection. Here, we demonstrate that the terahertz dielectric function of ZnTe undergoes substantial transient modification at 800 nm sub-bandgap excitation under conditions typical for terahertz generation. These modifications arise from significant free-carrier generation via two-photon absorption of the 800-nm pump, accompanied by the pump-driven activation of the terahertz-active phonon modes. Using optical pump–terahertz probe spectroscopy, we characterize the terahertz dielectric function of ZnTe under 800-nm excitation as a function of pump fluence and pump-probe delay. Analysis of the experimental data within the Drude-Lorentz model provided the generated free-carrier density and momentum-scattering time, and oscillator strength of the pump-activated terahertz phonon modes, revealing their transient evolution in dependence on the excitation conditions.

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