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Giant Rashba splitting in InBi/SbBi chains on InSb(110): Surface reconstruction as a route to spin-split one-dimensional states

Rohit Yadav1,*,†, Qirui Cui2,‡, Sina Ritter1, Weimin Wang3, Eleni Charitoudi1, Anna Delin2,4,5, and Rainer Timm1,§

  • *Present address: NNF Quantum Computing Programme, Niels Bohr Institute, University of Copenhagen, Denmark.
  • †Contact author: rohit.yadav@nbi.ku.dk
  • ‡Contact author: qiruic@kth.se
  • §Contact author: rainer.timm@fysik.lu.se

Phys. Rev. B 114, 185430 – Published 28 September, 2026

DOI: https://doi.org/10.1103/ly3w-33fy

Abstract

Bismuth-induced (1×2) and (1×3) surface reconstructions on InSb(110) exhibit a tunable giant Rashba splitting associated with one-dimensional atomic chain structures. Remarkably, the lower Bi-coverage Bi/InSb(110)-(1×3) phase shows a larger Rashba splitting parameter than the (1×2) phase, revealing a counterintuitive dependence of spin splitting on adsorbate concentration. Combining surface-science experiments and density functional theory, we show that the magnitude of band splitting is governed by the interplay between atomic-scale surface corrugation and spin-orbit coupling from Bi. Our calculations further indicate that, while Bi is essential to induce the Rashba effect, the significant contribution arises from the InSb substrate. The Bi/InSb(110) reconstructed surface consists of Bi chains bonded selectively to In or Sb of the substrate. These results establish Bi/InSb(110) as a platform for engineering the strength of spin splitting and for enabling the ordered growth of InBi nanostructures.

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References (45)

  1. R. Canyellas, C. Liu, R. Arouca, L. Eek, G. Wang, Y. Yin, D. Guan, Y. Li, S. Wang, H. Zheng, et al., Topological edge and corner states in bismuth fractal nanostructures, Nat. Phys. 20, 1421 (2024).
  2. I. K. Drozdov, A. Alexandradinata, S. Jeon, S. Nadj-Perge, H. Ji, R. J. Cava, B. A. Bernevig, and A. Yazdani, One-dimensional topological edge states of bismuth bilayers, Nat. Phys. 10, 664 (2014).
  3. R. Yadav, S. Benter, and R. Timm, Localized trimers inducing metallic states in sub-monolayer thin Bi films on InSb(111)A, Phys. Rev. Mater. 9, 064204 (2025).
  4. T. Nakamura, Y. Ohtsubo, Y. Yamashita, S. I. Ideta, K. Tanaka, K. Yaji, A. Harasawa, S. Shin, F. Komori, R. Yukawa, et al., Giant Rashba splitting of quasi-one-dimensional surface states on Bi/InAs(110)- (2×1), Phys. Rev. B 98, 075431 (2018).
  5. A. N. Mihalyuk, L. V. Bondarenko, A. Y. Tupchaya, D. V. Gruznev, N. Yu. Solovova, V. A. Golyashov, O. E. Tereshchenko, T. Okuda, A. Kimura, S. V. Eremeev, et al., Emergence of quasi-1D spin-polarized states in ultrathin Bi films on InAs(111)A for spintronics applications, Nanoscale 16, 1272 (2023).
  6. O. M. Auslaender, A. Yacoby, R. De Picciotto, K. W. Baldwin, L. N. Pfeiffer, and K. W. West, Tunneling spectroscopy of the elementary excitations in a one-dimensional wire, Science 295, 825 (2002).
  7. C. Blumenstein, J. Schäfer, S. Mietke, S. Meyer, A. Dollinger, M. Lochner, X. Y. Cui, L. Patthey, R. Matzdorf, and R. Claessen, Atomically controlled quantum chains hosting a Tomonaga-Luttinger liquid, Nat. Phys. 7, 776 (2011).
  8. P. M. Sheverdyaeva, G. Bihlmayer, S. Modesti, V. Feyer, M. Jugovac, G. Zamborlini, C. Tusche, Y-J. Chen, X. L. Tan, K. Hagiwara, et al., Giant Rashba-splitting of one-dimensional metallic states in Bi dimer lines on InAs(100), Nanoscale 16, 15815 (2024).
  9. S. Benter, R. D. P. Maciel, S. Plissard, R. Yadav, M. Bianchi, P. Hofmann, C. Polley, C. S. Ong, O. Eriksson, R. Timm, et al., Giant Rashba splitting in a 2D BiAs layer on InAs(111)B, Commun. Mater. 7, 123 (2026).
  10. B. Geldiyev, M. Ünzelmann, P. Eck, T. Kißlinger, J. Schusser, T. Figgemeier, P. Kagerer, N. Tezak, M. Krivenkov, A. Varykhalov, et al., Strongly anisotropic spin and orbital Rashba effect at a tellurium–noble metal interface, Phys. Rev. B 108, L121107 (2023).
  11. T. Nakamura, Y. Ohtsubo, N. Tokumasu, P. LeFèvre, F. Bertran, S. Ideta, K. Tanaka, K. Kuroda, K. Yaji, A. Harasawa, et al., Giant Rashba system on a semiconductor substrate with tunable Fermi level: Bi/GaSb(110)-(2×1), Phys. Rev. Mater. 3, 126001 (2019).
  12. C. R. Ast, J. Henk, A. Ernst, L. Moreschini, M. C. Falub, D. Pacilé, P. Bruno, K. Kern, and M. Grioni, Giant spin splitting through surface alloying, Phys. Rev. Lett. 98, 186807 (2007).
  13. P. M. Sheverdyaeva, D. Pacilè, D. Topwal, U. Manju, M. Papagno, V. Feyer, M. Jugovac, G. Zamborlini, I. Cojocariu, C. Tusche, et al., One-dimensional Rashba states with unconventional spin texture in Bi chains, Phys. Rev. B 106, 045108 (2022).
  14. J. Park, S. W. Jung, M. C. Jung, H. Yamane, N. Kosugi, and H. W. Yeom, Self-assembled nanowires with giant Rashba split bands, Phys. Rev. Lett. 110, 036801 (2013).
  15. Y. Ohtsubo, N. Tokumasu, H. Watanabe, T. Nakamura, P. LeFèvre, F. Bertran, M. Imamura, I. Yamamoto, J. Azuma, K. Takahashi, et al., One-dimensionality of the spin-polarized surface conduction and valence bands of quasi-one-dimensional Bi chains on GaSb(110)-(2×1), Phys. Rev. B 101, 235306 (2020).
  16. C. M. Acosta, E. Ogoshi, A. Fazzio, G. M. Dalpian, and A. Zunger, The Rashba scale: Emergence of band anti-crossing as a design principle for materials with large Rashba coefficient, Matter 3, 145 (2020).
  17. R. Sun, S. Yang, X. Yang, E. Vetter, D. Sun, N. Li, L. Su, Y. Li, Y. Li, Z. Gong, et al., Large tunable spin-to-charge conversion induced by hybrid Rashba and Dirac surface states in topological insulator heterostructures, Nano Lett. 19, 4420 (2019).
  18. T. Tanaka and Y. Gohda, First-principles prediction of one-dimensional giant Rashba splittings in Bi-adsorbed in atomic chains, Phys. Rev. B 98, 241409(R) (2018).
  19. D. Nafday, C. Richter, O. Heckmann, W. Wang, J-M. Mariot, U. Djukic, I. Vobornik, P. Lefevre, A. Taleb-Ibrahimi, F. Bertran, et al., Electronic structure of Bi nanolines on InAs(100), Appl. Surf. Sci. 611, 155436 (2023).
  20. E. Marcellina, A. R. Hamilton, R. Winkler, and D. Culcer, Spin-orbit interactions in inversion-asymmetric two-dimensional hole systems: A variational analysis, Phys. Rev. B 95, 075305 (2017).
  21. M. Gmitra and J. Fabian, First-principles studies of orbital and spin-orbit properties of GaAs, GaSb, InAs, and InSb zinc-blende and wurtzite semiconductors, Phys. Rev. B 94, 165202 (2016).
  22. W. K. Ford, T. Guo, S. L. Lantz, K. Wan, S. -L. Chang, C. B. Duke, and D. L. Lessor, Bismuth and antimony adsorption on III–V(110) substrates: Growth, order, and structure, J. Vac. Sci. Technol. B 8, 940 (1990).
  23. T. Guo, K. J. Wan, and W. K. Ford, A leed study of bismuth overlayer formation on InSb(110), MRS Proceedings 159, 39 (1989).
  24. M. G. Betti, D. Berselli, C. Mariani, N. Jedrecy, M. Sauvage-Simkin, Y. Garreau, and R. Pinchaux, (1×2) Bi chain reconstruction on the InAs(110) surface, Phys. Rev. B 59, 15760 (1999).
  25. T. van Gemmeren, L. Lottermoser, G. Falkenberg, L. Seehofer, R. L. Johnson, L. Gavioli, C. Mariani, R. Feidenhans'l, E. Landemark, D. Smilgies, and M. Nielsen, Bismuth-induced restructuring of the GaSb(110) surface, Phys. Rev. B Condens. Matter Mater. Phys. 57, 3749 (1998).
  26. B. Keen, R. Makin, P. A. Stampe, R. J. Kennedy, S. Sallis, L. J. Piper, B. McCombe, and S. M. Durbin, Growth parameters for thin film InBi grown by molecular beam epitaxy, J. Electron. Mater. 43, 914 (2014).
  27. G. Kresse and J. Hafner, Ab initio molecular dynamics for liquid metals, Phys. Rev. B 47, 558 (1993).
  28. G. Kresse and J. Furthmüller, Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set, Phys. Rev. B 54, 11169 (1996).
  29. G. Kresse and J. Furthmüller, Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set, Comput. Mater. Sci. 6, 15 (1996).
  30. P. E. Blöchl, Projector augmented-wave method, Phys. Rev. B 50, 17953 (1994).
  31. Y. Wang and J. P. Perdew, Correlation hole of the spin-polarized electron gas, with exact small-wave-vector and high-density scaling, Phys. Rev. B 44, 13298 (1991).
  32. G. Kresse and D. Joubert, From ultrasoft pseudopotentials to the projector augmented-wave method, Phys. Rev. B 59, 1758 (1999).
  33. See Supplemental Material at http://link.aps.org/supplemental/10.1103/ly3w-33fy for surface characterization of the cleaved InSb(110) surface; STM and ARPES measurements of the Bi/InSb(110)-intermediate reconstruction; simulated band dispersions and surface corrugation for Bi/InSb(110)-(1×2); spin-resolved band structures of Bi/InSb(110)-(1×3); and tabulated XPS fitting parameters and binding energies.
  34. V. Y. Aristov, M. Bertolo, P. Althainz, and K. Jacobi, The Ag/n-InSb(110) interface at 10 K: First observation of an anomalous Fermi-level pinning, Surf. Sci. 281, 74 (1993).
  35. M. G. Betti, D. Berselli, and C. Mariani, Electronic properties of (1xn)-reconstructed Bi/InSb(110) interfaces, J. Electron Spectros. Relat. Phenomena 76, 465 (1995).
  36. K. Miyamoto, A. Kimura, T. Okuda, K. Shimada, H. Iwasawa, H. Hayashi, H. Namatame, M. Taniguchi, and M. Donath, Massless or heavy due to two-fold symmetry: Surface-state electrons at W(110), Phys. Rev. B 86, 161411(R) (2012).
  37. D. Berselli, M. G. Betti, L. Gavioli, and C. Mariani, Bismuth-induced electronic states at (2×1)-Bi III-V(110) interfaces, Surf. Sci. 331–333, 496 (1995).
  38. L. J. Sham and M. Schlüter, Density-functional theory of the energy gap, Phys. Rev. Lett. 51, 1888 (1983).
  39. W. Kohn and L. J. Sham, Self-consistent equations including exchange and correlation effects, Phys. Rev. 140, A1133 (1965).
  40. P. Fery, W. Moritz, and D. Wolf, Structure determination of the (1×2) and (1×3) reconstructions of Pt(110) by low-energy electron diffraction, Phys. Rev. B 38, 7275 (1988).
  41. Q. Cui et al., Robust and high photoluminescence in WS2 monolayer through in situ defect engineering, Adv. Funct. Mater. 31, 2105339 (2021).
  42. R. Yadav, R. D. P. Maciel, S. Benter, C. S. Ong, O. Eriksson, A. Mikkelsen, and R. Timm, Bi trimers and self-limiting Bi-Sb interface formation upon Bi deposition on InSb(111)B surfaces, Surf. Interfaces 73, 107589 (2025).
  43. K. Szamota-Leandersson, M. Leandersson, M. Göthelid, and U. O. Karlsson, Correlated development of a (2×2) reconstruction and a charge accumulation layer on the InAs(111)-Bi surface, Surf. Sci. 605, 12 (2011).
  44. Z. Fang, H. Gao, J. W. F. Venderbos, and A. M. Rappe, Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys, Phys. Rev. B 101, 125202 (2020).
  45. H. Huang, J. Liu, and W. Duan, Nontrivial Z2 topology in bismuth-based III-V compounds, Phys. Rev. B 90, 195105 (2014).

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