Contrasting anomalous Hall mechanisms in and : Intrinsic Berry curvature and the emergence of skew scattering
Phys. Rev. B 114, 225133 – Published 22 October, 2026
DOI: https://doi.org/10.1103/lvt5-5y4x
Abstract
We report a comparative study of the anomalous Hall effect (AHE) in single crystals of the two-dimensional van der Waals (vdWs) ferromagnets and , grown by chemical vapor transport, over wide temperature and magnetic-field ranges. From magnetization, longitudinal resistivity , and Hall measurements, we extract the ordinary and anomalous Hall coefficients and scale the anomalous Hall conductivity against the longitudinal conductivity . In is nearly independent of and scales linearly with magnetization across the entire ordered phase, with the resistivity scaling yielding a negligible linear term; this identifies a predominantly intrinsic, Berry-curvature-driven AHE consistent with its nodal-line electronic structure. exhibits a mixed intrinsic and extrinsic anomalous Hall response. Below , the scaling analysis reveals a finite skew-scattering contribution, accompanied by a breakdown of the linear relationship. In the vicinity of , we observe a broad maximum in the resistivity, a nonmonotonic evolution of the anomalous Hall resistivity, and a pronounced change in the Hall coefficients, consistent with a temperature-dependent multiband electronic response involving both electron- and holelike contributions. The emergence of a finite topological Hall contribution in the same temperature-field regime is consistent with the development of noncoplanar magnetic textures. These results establish a direct link between sublattice-dependent electronic structure and the intrinsic-to-extrinsic crossover of the AHE in the family, with representing the intrinsic limit and a tunable mixed regime.