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    Si-O network connectivity as a structural signature of self-passivation of β−FeSi2 surfaces

    Jun Chai1,*, Hangjia Shen1, Mingping He1, Yulin Zhou1, and Pan Liu2,†

    • 1College of Chemical and Material Engineering, Quzhou University, Quzhou, Zhejiang 324000, China
    • 2Frontier Research Initiative, New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai, Miyagi 9808579, Japan

    • *Contact author: chaijun@qzc.edu.cn
    • †Contact author: liu.pan.a5@tohoku.ac.jp

    Phys. Rev. B 114, 235305 – Published 23 October, 2026

    DOI: https://doi.org/10.1103/lr3v-61qw

    Abstract

    β−FeSi2 exhibits exceptional oxidation resistance, commonly attributed to the formation of a dense, protective SiO2 surface layer; however, the atomistic pathway governing the emergence of this layer and the subsequent suppression of oxidation remains elusive. In this work, we develop an active-learning MACE interatomic potential for the reactive Fe-Si-O system and incorporate a Fermi-like potential wall to enable one-sided reactive molecular-dynamics simulations of β−FeSi2 surface oxidation. By analyzing 100 statistically independent trajectories, we find that self-limiting oxidation on both Si-terminated and Fe-terminated surfaces is consistently associated with the development of an extended connected Si-O network within the oxidized interfacial region. The Si-terminated surface passivates through direct oxidation of exposed Si atoms, whereas the Fe-terminated surface first undergoes Fe oxidation before oxygen reaches the subsurface Si-rich region and forms an extended connected Si-O network. Statistical analysis shows that Fe-O-Fe connectivity is either negligible or incomplete and does not constitute the primary passivating framework. Species-resolved density profiles ρα(z,t) reveal that oxidation proceeds through coupled oxygen incorporation, substrate-atom migration, and interfacial reconstruction, rather than simple inward oxygen diffusion into a static substrate. These results support a connectivity-based microscopic picture in which the development of an extended Si-O network is consistently associated with self-limiting oxidation of β−FeSi2 surfaces, and they provide a transferable computational protocol for exploring oxidation mechanisms in transition-metal silicides and related reactive materials.

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