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    Anisotropic magnetotransport and optical response of the multiband low-carrier antiferromagnet DyPtSb

    Snehashish Chatterjee1,*,†, Abhinav Agarwal1,*, Raphael Borkenhagen2, Christine A. Kuntscher2, Maciej J. Winiarski1, Orest Pavlosiuk1, Piotr Wiśniewski1, and Dariusz Kaczorowski1,‡

    • *These authors contributed equally to this work.
    • †Contact author: sneho7391@gmail.com
    • ‡Contact author: d.kaczorowski@intibs.pl

    Phys. Rev. B 114, 154412 – Published 14 September, 2026

    DOI: https://doi.org/10.1103/lqnh-7d73

    Abstract

    We report a combined study of the magnetic, electrical transport, optical reflectivity, and electronic properties of single-crystalline DyPtSb, a half-Heusler antiferromagnet that orders at 2.2 K. The electrical resistivity exhibits semiconductor-like behavior and the Hall response becomes strongly nonlinear at low temperatures, indicating multiband transport with hole- and electron-type pockets. Angular magnetoresistance measurements revealed occurrence of twofold and fourfold symmetry components, both of which change sign near magnetic field of 4 T at 2 K, suggesting a field-induced modification of the electronic structure near the crossover from the antiferromagnetic to the spin-polarized regime. The optical spectroscopy revealed a temperature-dependent plasma edge and a Drude response, consistent with the bulk electrical transport data. In contrast to the characteristic feature of three-dimensional Dirac and Weyl semimetals, the optical conductivity of DyPtSb does not exhibit clear linear-in-frequency behavior at low energy. The results of ab initio electronic band-structure calculations revealed that the compound is a narrow-gap semiconductor, showing pronounced anisotropy of valence bands and strong sensitivity to magnetic polarization. DyPtSb was characterized as a multiband low-carrier antiferromagnet whose electrical transport properties are closely tied to the evolution of its electronic structure.

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