The noncollinear antiferromagnet (AFM), ${\mathrm{Mn}}_3\mathrm{Sn}$, exhibits ultrafast spin dynamics and negligible stray fields, making it a promising candidate for fast and energy-efficient spintronic devices. However, its practical applications remain limited by the relatively small Hall response compared with ferromagnets. Here, we demonstrate through both first-principles calculations and experiments that Cr doping is a promising strategy to enhance the anomalous Hall transport in ${\mathrm{Mn}}_3\mathrm{Sn}$ without breaking the antiferromagnetic order. Our first-principles calculations reveal an effective Cr-doping window that enhances the anomalous Hall conductivity while largely preserving the host coplanar inverse triangular AFM order. Berry curvature and Wannier Hamiltonian analyses further reveal that Cr substitution amplifies the preexisting Berry curvature hot spots through coordinated changes in the energy alignment, local interband gap, and Mn-derived orbital weight of the relevant bands. Experimentally, we have found that Cr doping not only supports our computational predictions (enhancement of the anomalous Hall conductivity), but also suppresses the transition to helical or spin-glass phases at low temperatures. These findings demonstrate that Cr doping is an effective strategy for stabilizing the AFM order while simultaneously improving the anomalous Hall transport properties over a wide temperature range in ${\mathrm{Mn}}_3\mathrm{Sn}$.

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• Anomalous Hall effect
• Antiferromagnetism
• Berry curvature
• Spintronics
• Magnetic thin films
• Noncollinear magnets
• First-principles calculations