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    Tricriticality and order-disorder behavior in MAPbI3

    Juan Hu1, Chenglong Hu2, Xiaolian Liu2, Dexin Yang2,*, and Xuefeng Zhang1,2,†

    • 1Key Laboratory for Anisotropy and Texture of Materials (MOE), School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China
    • 2Zhejiang Key Laboratory of Energy Conversion Materials for Advanced Motor, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310012, China

    • *Contact author: dy263@hdu.edu.cn
    • †Contact author: zhang@hdu.edu.cn

    Phys. Rev. B 112, 214118 – Published 29 December, 2025

    DOI: https://doi.org/10.1103/f5jy-pgk9

    Abstract

    Methylammonium lead iodide (MAPbI3) is a material of intense topical interest because of its potential applications in highly efficient solar cells, and its phase transitions and dynamical features have fundamental effects on its optoelectronic properties. We present a detailed strain analysis of the cubic-tetragonal-orthorhombic structural transitions in MAPbI3 using Landau free energy expansions and group theory combined with experimental spontaneous strains and heat capacity data. We find that the cubic-tetragonal transition exhibits the nearly tricritical characteristic with a modest entropy change. In contrast, the tetragonal-orthorhombic transition is strongly first-order, with a much larger entropy change which is a feature of an order-disorder transition associated with the freezing of the MA+ cations. We also observe a pronounced anomaly in the shear strain e4 in the orthorhombic structure near 85 K, indicating a pseudo-Jahn-Teller distortion owing to the formation of Pb 6s2 lone-pair states, correlating with electron polaron formation. These findings clarify the interplay of lattice distortion and molecular dynamics in MAPbI3. By revealing the fundamental strain-mediated mechanisms of these transitions, our work provides insights for strain engineering of hybrid perovskite devices, with implications for their stability and optoelectronic performance.

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