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    Resonant 4f photoemission from lanthanides at the 4d edge: Analysis for individual |MJ〉 states

    D. Yu. Usachov1,2,*, K. Kliemt3, C. Krellner3, V. S. Stolyarov2,4, G. Poelchen5, and D. V. Vyalikh6,7,8,†

    • *Contact author: dmitry.usachov@spbu.ru
    • †Contact author: denis.vyalikh@dipc.org

    Phys. Rev. B 112, 035140 – Published 15 July, 2025

    DOI: https://doi.org/10.1103/dsmt-b5f2

    Abstract

    Rapid development of material systems containing lanthanides (Ln) highlights the need for a thorough evaluation of Ln-driven properties, for which Ln-sensitive resonant photoelectron spectroscopy (RPES) can be particularly useful. Employing RPES in combination with theoretical modeling, we investigate in detail the LnRh2Si2 compound family, particularly to examine how photoelectron diffraction (PED) and the crystal electric field (CEF) influence the resonantly enhanced 4f emission associated with individual |MJ〉 ground states. The presence of two well-defined Ln- and Si-terminated surfaces together with the pronounced reorientation of 4f moments at the surface due to change of CEF makes LnRh2Si2 particularly well suited for this study, which was performed for the region of Ln 4d→4f excitations. High-quality data for Tb, Tm, and Ho enabled detailed analysis of the effects of PED and CEF on the RPES 4f spectra for individual |MJ〉 states, revealing excellent agreement between experiment and theory. Based on this, we discuss theoretical results for other LnRh2Si2 systems. The resulting overview of resonant 4f photoemission spectra and PED patterns provides a solid platform for investigating a wide range of Ln-based systems, from molecules to solids, with a particular focus on evaluating properties arising from 4f magnetic moments and their orientation.

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