Resonant photoemission from lanthanides at the edge: Analysis for individual states
Phys. Rev. B 112, 035140 – Published 15 July, 2025
DOI: https://doi.org/10.1103/dsmt-b5f2
Abstract
Rapid development of material systems containing lanthanides (Ln) highlights the need for a thorough evaluation of Ln-driven properties, for which Ln-sensitive resonant photoelectron spectroscopy (RPES) can be particularly useful. Employing RPES in combination with theoretical modeling, we investigate in detail the compound family, particularly to examine how photoelectron diffraction (PED) and the crystal electric field (CEF) influence the resonantly enhanced emission associated with individual ground states. The presence of two well-defined Ln- and Si-terminated surfaces together with the pronounced reorientation of moments at the surface due to change of CEF makes particularly well suited for this study, which was performed for the region of Ln excitations. High-quality data for Tb, Tm, and Ho enabled detailed analysis of the effects of PED and CEF on the RPES spectra for individual states, revealing excellent agreement between experiment and theory. Based on this, we discuss theoretical results for other systems. The resulting overview of resonant photoemission spectra and PED patterns provides a solid platform for investigating a wide range of Ln-based systems, from molecules to solids, with a particular focus on evaluating properties arising from magnetic moments and their orientation.