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    Fermiology of the kagome compound LuNb6Sn6 probed by de Haas–van Alphen oscillations

    Tucker Beekmann1,*, Caue Kaufmann Ribeiro2,*, Kyryl Shtefiienko1, Jiaqiang Yan3, Brenden R. Ortiz3, Christopher A. Mizzi2, and Keshav Shrestha1,†

    • *These authors contributed equally to this work.
    • †Contact author: kshrestha@wtamu.edu

    Phys. Rev. B 114, 185132 – Published 28 September, 2026

    DOI: https://doi.org/10.1103/cfgl-ggn6

    Abstract

    We report a detailed de Haas–van Alphen (dHvA) study of the recently discovered kagome metal LuNb6Sn6 using torque magnetometry, electrical transport, magnetization, and heat-capacity measurements. Temperature-dependent torque, resistivity, and heat capacity data reveal a charge density wave (CDW) transition at TCDW=85K. The thermal hysteresis observed in both measurements establishes the first-order nature of the transition. Quantum oscillation measurements identify two major dHvA frequencies: Fα≈20T and Fβ≈200T for a field applied within the ab plane, and their angular dependence is consistent with ellipsoidal Fermi surface (FS) pockets. Landau fan diagram analysis reveals evidence for a nontrivial Berry phase associated with the Fα pocket, indicating possible nontrivial electronic topology in LuNb6Sn6. Analysis of the temperature and magnetic field dependence of the oscillations using the Lifshitz-Kosevich formula yields electronic parameters that suggest anisotropic quantum transport properties. First-principles calculations provide further insight into the electronic structure, revealing Dirac-like band crossings, a flat band, and multiple van Hove singularities near the Fermi level. Our calculations based on the pristine phase cannot fully reproduce the experimentally observed quantum oscillation frequencies, suggesting that CDW-induced Fermi surface (FS) reconstruction plays a crucial role in the ground-state electronic structure of LuNb6Sn6. These results provide new insight into the FS topology and electronic structure of LuNb6Sn6, enriching our understanding of the electronic properties of kagome materials.

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