Interlayer stacking in two-dimensional van der Waals heterostructures offers a powerful means to tune crystal symmetry and charge distribution. In this work, we designed a low-mismatch heterostructure consisting of arsenene and ${\mathrm{CuInP}}_2{\mathrm{S}}_6$ (CIPS), in which interface-induced effects stabilize a high-polarization (HP) phase. First-principles calculations demonstrate that orbital symmetry matching between Cu and As atoms promotes the spontaneous formation of Cu-As bonds, which enhances Cu displacement and interlayer charge redistribution, thereby strengthening the out-of-plane polarization. Building on this mechanism, we proposed a trilayer chiral moiré superlattice of arsenene/CIPS/arsenene as a ferroelectric memory array, featuring two discrete polarization domains with a maximum polarization of 7.00 pC/m and an estimated storage density of ${10}^{10}\mathrm{bits}/{\mathrm{mm}}^2$. Arsenene coupling, particularly via Cu-As bonds, further increases the ferroelectric switching barrier and Curie temperature. These findings present a pressure-free strategy for stabilizing the HP phase of CIPS at room temperature and provide a promising platform for high-speed, high-density, nonvolatile ferroelectric memory applications.

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• Domains
• Ferroelectricity
• 2-dimensional systems
• Twisted heterostructures
• First-principles calculations
• Monte Carlo methods