- Editors' Suggestion
- Letter
- Open Access
Theory for tunnel magnetoresistance oscillation
Phys. Rev. B 111, L220406 – Published 9 June, 2025
DOI: https://doi.org/10.1103/PhysRevB.111.L220406
Abstract
The universal oscillation of the tunnel magnetoresistance (TMR) ratio as a function of the insulating barrier thickness in crystalline magnetic tunnel junctions (MTJs) is a long-standing unsolved problem in condensed matter physics. To explain this, we here introduce a superposition of wave functions with opposite spins and different Fermi momenta, based on the fact that spin-flip scattering near the interface provides a hybridization between majority- and minority-spin states. In a typical Fe/MgO/Fe MTJ, we solve the tunneling problem and show that the TMR ratio oscillates with a period of Å by varying the MgO thickness, consistent with previous and present experimental observations.
Physics Subject Headings (PhySH)
Article Text
Supplemental Material
References (48)
- L. Esaki, New phenomenon in narrow germanium – junctions, Phys. Rev. 109, 603 (1958).
- I. Giaever, Energy gap in superconductors measured by electron tunneling, Phys. Rev. Lett. 5, 147 (1960).
- G. Binnig and H. Rohrer, Scanning tunneling microscopy—from birth to adolescence, Rev. Mod. Phys. 59, 615 (1987).
- S. S. P. Parkin, C. Kaiser, A. Panchula, P. M. Rice, B. Hughes, M. Samant, and S.-H. Yang, Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers, Nat. Mater. 3, 862 (2004).
- S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki, and K. Ando, Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions, Nat. Mater. 3, 868 (2004).
- R. Matsumoto, A. Fukushima, T. Nagahama, Y. Suzuki, K. Ando, and S. Yuasa, Oscillation of giant tunneling magnetoresistance with respect to tunneling barrier thickness in fully epitaxial Fe/MgO/Fe magnetic tunnel junctions, Appl. Phys. Lett. 90, 252506 (2007).
- T. Ishikawa, S. Hakamata, K.-i. Matsuda, T. Uemura, and M. Yamamoto, Fabrication of fully epitaxial /MgO/ magnetic tunnel junctions, J. Appl. Phys. 103, 07A919 (2008).
- T. Marukame, T. Ishikawa, T. Taira, K. I. Matsuda, T. Uemura, and M. Yamamoto, Giant oscillations in spin-dependent tunneling resistances as a function of barrier thickness in fully epitaxial magnetic tunnel junctions with a MgO barrier, Phys. Rev. B 81, 134432 (2010).
- T. Scheike, Q. Xiang, Z. Wen, H. Sukegawa, T. Ohkubo, K. Hono, and S. Mitani, Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions, Appl. Phys. Lett. 118, 042411 (2021).
- T. Scheike, Z. Wen, H. Sukegawa, and S. Mitani, Enhanced tunnel magnetoresistance in Fe//Fe(001) magnetic tunnel junctions, Appl. Phys. Lett. 120, 032404 (2022).
- T. Scheike, Z. Wen, H. Sukegawa, and S. Mitani, 631% room temperature tunnel magnetoresistance with large oscillation effect in CoFe/MgO/CoFe(001) junctions, Appl. Phys. Lett. 122, 112404 (2023).
- W. H. Butler, X.-G. Zhang, T. C. Schulthess, and J. M. MacLaren, Spin-dependent tunneling conductance of sandwiches, Phys. Rev. B 63, 054416 (2001).
- J. Mathon and A. Umerski, Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction, Phys. Rev. B 63, 220403(R) (2001).
- C. Heiliger, P. Zahn, B. Y. Yavorsky, and I. Mertig, Thickness dependence of the tunneling current in the coherent limit of transport, Phys. Rev. B 77, 224407 (2008).
- X.-G. Zhang, Y. Wang, and X. F. Han, Theory of nonspecular tunneling through magnetic tunnel junctions, Phys. Rev. B 77, 144431 (2008).
- G. Autès, J. Mathon, and A. Umerski, Oscillatory behavior of tunnel magnetoresistance in a magnetic tunnel junction with varying magnetic layer thickness, Phys. Rev. B 84, 134404 (2011).
- P. Mavropoulos, M. Lezaic, and S. Blügel, Half-metallic ferromagnets for magnetic tunnel junctions by ab initio calculations, Phys. Rev. B 72, 174428 (2005).
- Y. Miura, K. Abe, and M. Shirai, Effects of interfacial noncollinear magnetic structures on spin-dependent conductance in /MgO/ magnetic tunnel junctions: A first-principles study, Phys. Rev. B 83, 214411 (2011).
- K. Masuda, T. Tadano, and Y. Miura, Crucial role of interfacial exchange interaction in the temperature dependence of tunnel magnetoresistance, Phys. Rev. B 104, L180403 (2021).
- See Supplemental Material at http://link.aps.org/supplemental/10.1103/PhysRevB.111.L220406 for the basis of our theory, continuation conditions, treatment of effective masses, choice of wave functions, model for the interfacial spin-flip scattering, analogy with the double-slit experiment, the experimental method, further experimental results, and the relation with expe- riments using Heusler alloys, which includes Refs. [7, 8, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31].
- J. H. Davies, The Physics of Low-Dimensional Semiconductors (Cambridge University Press, Cambridge, UK, 1998).
- D. J. BenDaniel and C. B. Duke, Space-charge effects on electron tunneling, Phys. Rev. 152, 683 (1966).
- J. R. Schrieffer and P. A. Wolff, Relation between the Anderson and Kondo Hamiltonians, Phys. Rev. 149, 491 (1966).
- J. Korringa, On the calculation of the energy of a Bloch wave in a metal, Physica 13, 392 (1947).
- W. Kohn and N. Rostoker, Solution of the Schrödinger equation in periodic lattices with an application to metallic lithium, Phys. Rev. 94, 1111 (1954).
- AkaiKKR (Machikaneyama), http://kkr.issp.u-tokyo.ac.jp.
- J. P. Perdew, K. Burke, and M. Ernzerhof, Generalized gradient approximation made simple, Phys. Rev. Lett. 77, 3865 (1996).
- P. Soven, Coherent-potential model of substitutional disordered alloys, Phys. Rev. 156, 809 (1967).
- S. Ishida, S. Fujii, S. Kashiwagi, and S. Asano, Search for half-metallic compounds in (Z=IIIb, IVb, Vb Element), J. Phys. Soc. Jpn. 64, 2152 (1995).
- I. Galanakis, P. H. Dederichs, and N. Papanikolaou, Slater-Pauling behavior and origin of the half-metallicity of the full-Heusler alloys, Phys. Rev. B 66, 174429 (2002).
- O. Gaier, J. Hamrle, S. J. Hermsdoerfer, H. Schultheiß, B. Hillebrands, Y. Sakuraba, M. Oogane, and Y. Ando, Influence of the ordering degree on the magnetic properties of Heusler films, J. Appl. Phys. 103, 103910 (2008).
- If we set , Eq. (4) coincides with Eq. (3) in Ref. [33], where different effective masses are not considered.
- J. M. MacLaren, X.-G. Zhang, and W. H. Butler, Validity of the Julliere model of spin-dependent tunneling, Phys. Rev. B 56, 11827 (1997).
- Y. Miura, S. Muramoto, K. Abe, and M. Shirai, First-principles study of tunneling magnetoresistance in Fe//Fe(001) magnetic tunnel junctions, Phys. Rev. B 86, 024426 (2012).
- K. Masuda and Y. Miura, First-principles study on magnetic tunneling junctions with semiconducting and barriers, Jpn. J. Appl. Phys. 56, 020306 (2017).
- K. Masuda and Y. Miura, Bias voltage effects on tunneling magnetoresistance in Fe//Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions, Phys. Rev. B 96, 054428 (2017).
- We also considered a similar superposition of wave functions in the incident and reflection waves. This additional analysis clarified that these do not affect the oscillatory behavior of the transmittance given by the superposition in the transmitted wave. Thus, we omit these effects for simplicity.
- We used the same continuation conditions as mentioned in the Supplemental Material.
- This is because can be calculated by using instead of Eq. (7).
- A. Smogunov, A. D. Corso, and E. Tosatti, Ballistic conductance of magnetic Co and Ni nanowires with ultrasoft pseudopotentials, Phys. Rev. B 70, 045417 (2004).
- P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, I. Dabo, A. D. Corso, S. de Gironcoli, S. Fabris, G. Fratesi, R. Gebauer, U. Gerstmann, C. Gougoussis, A. Kokalj, M. Lazzeri, L. Martin-Samos et al., Quantum ESPRESSO: A modular and open-source software project for quantum simulations of materials, J. Phys.: Condens. Matter 21, 395502 (2009).
- In our results, differences in both the shape and phase between the and oscillations provide the TMR oscillation. Although the oscillation shapes of and look quite similar, these have a slight difference owing to the difference in the effective mass and the replacement of the coefficients ( and ) in the expression of the transmittance.
- TMR ratios at low temperature are more than twice as high as those at room temperature and can be reproduced by using a smaller value of .
- The amplitude of the oscillation hardly changes as the barrier thickness increases, consistent with the results in Fig. 2. In our theory, the amplitude of the transmittance oscillation is determined by the values of and in Eq. (7). Since and are assumed to be constant, the amplitude of the oscillation hardly changes with increasing . This assumption is reasonable, since the interfacial exchange interaction determining and is independent on .
- Note that the phase difference in is smaller than that in the inverse of the transmittance in Fig. 2; however, this does not mean that our theory is inconsistent with experimental observations [5, 6, 8, 9, 10, 11]. It is experimentally known that the phase difference highly depends on the quality of the sample and is not a universal feature for the TMR oscillation.
- We introduced nonoscillatory terms decreasing exponentially as the barrier thickness increases.
- For a better comparison with experimental results, we applied a shift in by 0.8 Å for Eq. (12).
- Experimentally, the shape of the TMR oscillation is different for different samples. Actually, -based MTJs have saw-tooth-like shapes [10] similarly to our present results, while MgO-based MTJs have sinelike shapes [9, 11]. These different shapes can be reproduced by tuning the parameters in our model.