We predict the giant ferroelectric control of interfacial properties of $\mathrm{Ni}/{\mathrm{HfO}}_2$, namely, (i) the magnetocrystalline anisotropy and (ii) the inverse spin and orbital Rashba effects. The reversible control of magnetic properties using electric gating is a promising route to low-energy consumption magnetic devices, including memories and logic gates. Synthetic multiferroics, composed of a ferroelectric in proximity to a magnet, stand out as a promising platform for such devices. Using a combination of ab initio simulations and transport calculations, we demonstrate that reversing the electric polarization modulates the interface magnetocrystalline anisotropy from in-plane to out-of-plane. This modulation compares favorably with recent reports obtained upon electromigration induced by ionic gating. In addition, we find that the current-driven spin and orbital densities at the interface can be modulated by about 50% and 30%, respectively. This giant modulation of the spin-charge and orbit-charge conversion efficiencies opens appealing avenues for voltage-controlled spin- and orbitronics devices.

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• Density of states
• Electronic structure
• Ferroelectricity
• Magnetic anisotropy
• Magnetoelectric effect
• Spin accumulation
• Spin-orbit coupling
• Spin-orbit torque
• Interfaces