Van-Hove (vH) singularities in the vicinity of the Fermi level facilitate the emergence of electronically mediated Fermi surface instabilities. This is because they provide a momentum-localized enhancement of density of states promoting selective electronic scattering channels. High-temperature topological superconductivity has been argued for in graphene at vH filling which, however, has so far proven inaccessible due to the demanded large doping from pristine half filling. We propose compensated metallicity as a path to unlock vH-driven pairing close to half filling in an electronic honeycomb lattice model. Enabled by an emergent multipocket fermiology, charge compensation is realized by strong breaking of chiral symmetry from intrasublattice hybridization, while retaining vH dominated physics at the Fermi level. We conclude by proposing tangible realizations through quantum material design.

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• Doping effects
• Electron-mediated pairing
• Luttinger's theorem
• Multiband superconductivity
• Nesting
• Topological superconductors
• Transition temperature
• Van Hove singularity
• d-wave
• Dirac semimetal
• Graphene
• Honeycomb lattice
• Chiral symmetry
• Functional renormalization group
• Hubbard model
• Random phase approximation
• Tight-binding model