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Floquet-Volkov interference in a semiconductor

Changhua Bao1,2, Haoyuan Zhong1,2, Benshu Fan1,2, Xuanxi Cai1,2, Fei Wang1,2, Shaohua Zhou1,2, Tianyun Lin1,2, Hongyun Zhang1,2, Pu Yu1,2 et al.

Peizhe Tang3,4,*, Wenhui Duan1,2,5,6, and Shuyun Zhou1,2,5,†

  • *Contact author: peizhet@buaa.edu.cn
  • †Contact author: syzhou@mail.tsinghua.edu.cn

Phys. Rev. B 111, L081106 – Published 10 February, 2025

DOI: https://doi.org/10.1103/PhysRevB.111.L081106

Abstract

An intense light field can dress both Bloch electrons inside crystals and photo-emitted free electrons in the vacuum, dubbed Floquet and Volkov states, respectively. These quantum states can further interfere coherently, modulating light-field dressed states. Here we report experimental evidence of the Floquet-Volkov interference in a semiconductor—black phosphorus. A highly asymmetric modulation of the spectral weight is observed for the Floquet-Volkov states, and such an asymmetry can be further controlled by rotating the pump polarization. Our work reveals the quantum interference between different light-field dressed electronic states, providing insights for material engineering on the ultrafast timescale.

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