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Built-in electric field control of magnetic coupling in van der Waals semiconductors

Chengxi Huang1, Jingtong Guan1, Qiongyu Li1, Fang Wu2, Puru Jena3,*, and Erjun Kan1,†

  • 1MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing and Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
  • 2College of Information Science and Technology, Nanjing Forestry University, Nanjing, Jiangsu 210037, People's Republic of China
  • 3Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284, USA

  • *Corresponding author: pjena@vcu.edu
  • †Corresponding author: ekan@njust.edu.cn

Phys. Rev. B 103, L140410 – Published 28 April, 2021

DOI: https://doi.org/10.1103/PhysRevB.103.L140410

Abstract

Electrical control of magnetism in a two-dimensional (2D) semiconductor is of great interest for emerging nanoscale low-dissipation spintronic devices. Here, we propose a general approach of tuning magnetic coupling and anisotropy of a van der Waals (vdW) 2D magnetic semiconductor via a built-in electric field generated by the adsorption of superatomic ions. Using first-principles calculations, we predict a significant enhancement of ferromagnetic coupling and a great change of magnetic anisotropy in 2D semiconductors when they are sandwiched between superatomic cations and anions. The magnetic coupling is directly affected by the built-in electric field, which lifts the energy levels of mediated ligands' orbitals and enhances the superexchange interactions. These findings will be of interest for ionic gating controlled ferromagnets and magnetoelectronics based on vdW 2D semiconductors.

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