- Open Access
Quantum transport in Hubbard-Rashba mesoscopic rings: Particle-hole symmetry and localization
Phys. Rev. B 114, 175112 – Published 8 September, 2026
DOI: https://doi.org/10.1103/9svy-vwyb
Abstract
We investigate equilibrium charge transport in a finite mesoscopic ring with nearest-neighbor Rashba spin-orbit coupling (SOC) and on-site Hubbard interactions. Using a self-consistent Hartree-Fock (HF) Green's-function approach, we compute persistent currents and the Drude weight while varying the Aharonov-Bohm flux , Rashba strength , Hubbard interaction , and electron filling. Within this finite-ring HF description, the transport response is governed by the competition between flux-sensitive single-particle dispersion, SOC-induced level rearrangements, and interaction-induced suppression of charge motion. Increasing monotonically reduces the Drude weight over the parameter range explored, consistent with a progressive reduction of flux sensitivity in the occupied HF spectrum. By contrast, Rashba SOC does not produce a simple monotonic enhancement. Instead, is strongly nonmonotonic: at selected values of , SOC brings levels near the chemical potential into near-degeneracy or avoided crossings, producing pronounced resonant enhancements of the flux curvature, whereas at other values the response can be lower than in the case. For the even- nearest-neighbor ring considered here, particle-hole symmetry relates fillings and . In the symmetry-preserving HF solution, the corresponding Drude weights and persistent-current profiles agree within numerical tolerance. In the finite ring, the largest Drude weight in the explored parameter window occurs at half filling. This result should be understood as a finite-size HF charge-stiffness effect, not as a statement about the exact thermodynamic Mott limit of the one-dimensional Hubbard model. Overall, the results provide a controlled mean-field picture of how Rashba SOC and Hubbard interactions compete in flux-sensitive mesoscopic transport and they identify tunable SOC regimes where the charge stiffness can be strongly enhanced.
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