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Tunneling magnetoresistance in a junction made of X-wave magnets with X=p, d, f, g, i

Motohiko Ezawa

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Phys. Rev. B 113, 155303 – Published 6 April, 2026

DOI: https://doi.org/10.1103/5ys6-pq68

Abstract

We investigate the tunneling magnetoresistance (TMR) of a bilayer system made of X-wave magnets with X=p,d,f,g,i, where X=d,g,i corresponds to altermagnets. A universal analytic formula is derived for the TMR ratio. It is proportional to |J|/(NXΓ) for small Γ, where NX is the number of the nodes of the X-wave magnet, J is the strength of the X-wave magnet, and Γ is the self-energy. It is contrasted with the TMR ratio made of ferromagnets, where it is proportional to J2/Γ2 for small Γ. Therefore, the TMR ratio is larger in ferromagnets for |J|>Γ. However, the X-wave magnets are expected to achieve high-speed and ultradense memory owing to the zero net magnetization.

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Outline

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Phys. Rev. B 113, 155303– Published 6 April, 2026
  • Received 20 September 2025
  • Revised 20 December 2025
  • Accepted 10 March 2026
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Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

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