We study the effects of strain on exciton dynamics in transition metal dichalcogenide (TMD) nanoribbons. Using the Bethe–Salpeter formalism, we derive the exciton dispersion relation in strained TMDs and demonstrate that strain-induced pseudogauge fields significantly influence exciton transport and interactions. Our results show that low-energy excitons occur at finite center-of-mass momentum, leading to modified diffusion properties. Furthermore, the exciton dipole moment depends on center-of-mass momentum, which enhances exciton-exciton interactions. These findings highlight the potential of strain engineering as a powerful tool for controlling exciton transport and interactions in nanoribbon-based TMD optoelectronic and quantum devices.

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• Bethe-Salpeter equation
• Effective field theory
• Excitons
• Transition metal dichalcogenides