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Multiterminal Josephson junctions with tunable topological properties

Panch Ram1,2,*, Detlef Beckmann3, Romain Danneau3, and Wolfgang Belzig2,†

  • *Contact author: panchram.phy@itbhu.ac.in
  • †Contact author: wolfgang.belzig@uni-konstanz.de
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Phys. Rev. B 112, 214508 – Published 8 December, 2025

DOI: https://doi.org/10.1103/2p7b-2hc2

Abstract

Since the discovery of the Andreev reflection process at normal-metal/superconductor junctions and the corresponding Andreev bound states in superconductor/normal-metal/superconductor junctions, various multiterminal Josephson junctions have been studied to explore many exotic phases of quantum matter, where the formation of Andreev bound states in the normal region account for dissipationless supercurrent and play a central role in determining exotic properties. Recently, an intriguing aspect of the multiterminal Josephson junctions has been proposed to study the topological properties, wherein the Andreev bound states acquire topological characteristics upon tuning the phase differences of superconducting terminals. In this work, we investigate topologically nontrivial phases in four-terminal Josephson junctions based on square and graphene lattices. Additionally, we apply a gating potential that smoothly drives the Andreev bound states from a topologically nontrivial state to a topologically trivial state. Furthermore, we observe that the gating potential in our setup produces similar physics of the topological Andreev bound states of the double (single) quantum-dot multiterminal Josephson junctions when the gating potential is small (large) compared to the superconducting energy gap.

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Phys. Rev. B 112, 214508– Published 8 December, 2025
  • Received 24 January 2025
  • Revised 7 October 2025
  • Accepted 19 November 2025
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Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

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