Morphological evolution of a semiconductor surface driven by irradiation-induced anisotropic plastic flow
Phys. Rev. B 114, 225406 – Published 7 October, 2026
DOI: https://doi.org/10.1103/22wv-7yl7
Abstract
While numerous models exist which explain certain aspects of irradiation-induced nanopatterning on semiconductors, a comprehensive theoretical explanation has remained elusive. However, it is increasingly apparent that such a model will require understanding the dual influence of the collision cascade initiated by ion implantation: first, as a source of material transport by sputtering and atomic displacements occurring over short timescales, and, second, as a source of defects permitting viscous flow within the thin, amorphous layer that results from sustained irradiation over longer timescales. To better understand the latter, we develop several asymptotic approximations for coupling the local ion flux experienced by the amorphous layer to the layer's evolving free interface. From these and the physical hypothesis of irradiation-induced anisotropic plastic flow, or “ion hammering,” we derive a generalized Kuramoto-Sivashinsky–type equation for the evolving free surface. With physically plausible parameters, the present model achieves good quantitative and qualitative agreement with several aspects of experimental observations of nanopattern formation during irradiation of silicon by argon, krypton, and xenon, and with projectile energies from 500 to 2000 eV. Disagreements between model and experiment are discussed, as are implications for future directions.
