We describe an equivalent circuit model applicable to a wide variety of magnetoelectric phenomena and use spice simulations to benchmark this model against experimental data. We use this model to suggest a different mode of operation where the 1 and 0 states are represented not by states with net magnetization (like $m_x$, $m_y$, or $m_z$) but by different easy axes, quantitatively described by ($m_x^2-m_y^2$), which switches from 0 to 1 through the write voltage. This change is directly detected as a read signal through the inverse effect. The use of ($m_x^2-m_y^2$) to represent a bit is a radical departure from the standard convention of using the magnetization ($m$) to represent information. We then show how the equivalent circuit can be used to build a device exhibiting tunable randomness and suggest possibilities for extending it to nonvolatile memory with read and write capabilities, without the use of external magnetic fields or magnetic tunnel junctions.

Surface-plasmon polaritons (SPPs), or localized electromagnetic surface waves propagating on a metal-dielectric interface, are deemed promising information carriers for future subwavelength terahertz and optical photonic circuitry. However, surface waves fundamentally suffer from scattering loss when encountering sharp corners in routing and interconnection of photonic signals. Previous approaches enabling scattering-free surface-wave guidance around sharp corners are limited to either volumetric waveguide environments or extremely narrow bandwidth, being unable to guide a surface-wave pulse (SPP wave packet) on an on-chip platform. Here, in a surface-wave band-gap crystal implemented on a single metal surface, we demonstrate in time-domain routing a surface-wave pulse around multiple sharp right angles without perceptible scattering. Our work not only offers a solution to on-chip surface-wave pulse routing along an arbitrary path, but it also provides spatiotemporal information on the interplay between surface-wave pulses and sharp corners, both of which are desirable in developing high-performance large-scale integrated photonic circuits.

A velocity-map-imaging spectrometer is demonstrated to characterize the normalized emittance (root-mean-square, rms) of photoemitted electron bunches. Both the two-dimensional spatial distribution and the projected velocity distribution images of photoemitted electrons are recorded by the detection system and analyzed to obtain the normalized emittance (rms). With the presented distribution function of the electron photoemission angles, a mathematical method is implemented to reconstruct the three-dimensional velocity distribution. As a first example, multiphoton emission from a planar Au surface is studied via irradiation at a glancing angle by intense 45-fs laser pulses at a central wavelength of 800 nm. The reconstructed energy distribution agrees very well with the Berglund-Spicer theory of photoemission. The normalized emittance (rms) of the intrinsic electron bunch is characterized to be 128 and 14 nm rad in the $X$ and $Y$ directions, respectively. The demonstrated imaging spectrometer has the ability to characterize the normalized emittance (rms) in a few minutes with a fine energy resolution of 0.2 meV in the image center and will, thereby, foster the further development of x-ray free-electron-laser injectors and ultrafast electron diffraction, and it opens up opportunities for studying correlated electron emission from surfaces and vacuum nanoelectronic devices.

Extracting charge-carrier mobilities for organic semiconductors from space-charge-limited conduction measurements is complicated in practice by nonideal factors such as trapping in defects and injection barriers. Here, we show that by allowing the bandlike charge-carrier mobility, trap characteristics, injection barrier heights, and the shunt resistance to vary in a multiple-trapping drift-diffusion model, a numerical fit can be obtained to the entire current density–voltage curve from experimental space-charge-limited current measurements on both symmetric and asymmetric $2,2^{\prime },7,7^{\prime }$-tetrakis($N,N$-di-4-methoxyphenylamine)-$9,9^{\prime }$-spirobifluorene (spiro-OMeTAD) single-carrier devices. This approach yields a bandlike mobility that is more than an order of magnitude higher than the effective mobility obtained using analytical approximations, such as the Mott-Gurney law and the moving-electrode equation. It is also shown that where these analytical approximations require a temperature-dependent effective mobility to achieve fits, the numerical model can yield a temperature-, electric-field-, and charge-carrier-density-independent mobility. Finally, we present an analytical model describing trap-limited current flow through a semiconductor in a symmetric single-carrier device. We compare the obtained charge-carrier mobility and trap characteristics from this analytical model to the results from the numerical model, showing excellent agreement. This work shows the importance of accounting for traps and injection barriers explicitly when analyzing current density–voltage curves from space-charge-limited current measurements.

Nanostructured films obtained by assembling preformed atomic clusters are of strategic importance for a wide variety of applications. The deposition of clusters produced in the gas phase onto a substrate offers the possibility to control and engineer the structural and functional properties of the cluster-assembled films. To date, the microscopic mechanisms underlying the growth and structuring of cluster-assembled films are poorly understood, and, in particular, the transition from the submonolayer to the thin-film regime is experimentally unexplored. Here we report the systematic characterization by atomic force microscopy of the evolution of the structural properties of cluster-assembled films deposited by supersonic cluster beam deposition. As a paradigm of nanostructured systems, we focus our attention on cluster-assembled zirconia films, investigating the influence of the building block dimensions on the growth mechanisms and roughening of the thin films, following the growth process from the early stages of the submonolayer to the thin-film regime. Our results demonstrate that the growth dynamics in the submonolayer regime determines different morphological properties of the cluster-assembled thin film. The evolution of the roughness with the number of deposited clusters reproduces the growth exponent of the ballistic deposition in the $2+1$ model from the submonolayer to the thin-film regime.

This paper is a contribution to the Physical Review Applied collection in memory of Mildred S. Dresselhaus.

We use ab initio molecular dynamics simulations to study the microscopic dynamics of potassium intercalation in graphite. Upon adsorbing on graphite from the vapor phase, K atoms transfer their valence charge to the substrate. K atoms adsorbed on the surface diffuse rapidly along the graphene basal plane and eventually enter the interlayer region following a “$\mathsf{U}$-turn” across the edge, gaining additional energy. This process is promoted at higher coverages associated with higher K pressure, leading to the formation of a stable intercalation compound. We find that the functionalization of graphene edges is an essential prerequisite for intercalation since bare edges reconstruct and reconnect, closing off the entry channels for the atoms.

In spin-based quantum-information-processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin linewidths, and it is therefore important to study, understand, and model such effects in order to better predict device performance. We investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminum microresonator is fabricated. The on-chip resonator provides two functions: it produces local strain in the silicon due to the larger thermal contraction of the aluminum, and it enables sensitive electron spin-resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations, we are able to reconstruct key features of our experiments, including the electron spin-resonance spectra. Our results are consistent with a recently observed mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain.

Most of the plutonium in the world resides inside spent nuclear reactor fuel rods. This high-level radioactive waste is commonly held in long-term storage within large, heavily shielded casks. Currently, international nuclear safeguards inspectors have no stand-alone method of verifying the amount of reactor fuel stored within a sealed cask. Here we demonstrate experimentally that measurements of the scattering angles of cosmic-ray muons, which pass through a storage cask, can be used to determine if spent fuel assemblies are missing without opening the cask. This application of technology and methods commonly used in high-energy particle physics provides a potential solution to this long-standing problem in international nuclear safeguards.

We report on a regime for surface-plasmon propagation, which is robust to defects and effectively single mode, and we exploit it for accessing the ultrafast nonlinear response of gold on centimeter-long subwavelength-diameter cylindrical nanowires. The hybrid plasmonic-photonic platform is formed by a gold nanowire, monolithically integrated into the core of an optical fiber. We show that, despite the dual-waveguide nature of this structure, the long-range surface plasmon is the only effectively propagating mode in the near infrared, which self-recovers in the presence of gaps via a light-recapturing effect. This self-recovery overcomes detrimental effects of wire discontinuities and enables measurements of the ultrafast nonlinearity of gold, which we perform for a 28-fs pulse duration.

Exploring and identifying room-temperature multiferroics is critical for developing better nonvolatile random-access memory devices. Recently, $ϵ\text{−}{\mathrm{Fe}}_2{\mathrm{O}}_3$ was found to be a promising room-temperature multiferroic with a large polarization and magnetization. However, the origin of the multiferroicity in $ϵ\text{−}{\mathrm{Fe}}_2{\mathrm{O}}_3$ is still puzzling. In this work, we perform density-functional-theory calculations to reveal that the spin frustration between tetrahedral-site ${\mathrm{Fe}}^{3+}$ spins gives rise to the unexpected ferrimagnetism. For the ferroelectricity, we identify a low-energy polarization switching path with an energy barrier of $85\mathrm{meV}/\mathrm{f}.\mathrm{u}.$ by performing a stochastic surface walking simulation. The switching of the ferroelectric polarization is achieved by swapping the tetrahedral Fe ion with the octahedral Fe ion, different from the usual case (e.g., in ${\mathrm{BaTiO}}_3$ and ${\mathrm{BiFeO}}_3$) where the coordination number remains unchanged after the switching. Our results not only confirm that $ϵ\text{−}{\mathrm{Fe}}_2{\mathrm{O}}_3$ is a promising room-temperature multiferroic but also provide guiding principles to design high-performance multiferroics.

Creating high-quality vector vortex (VV) beams is possible with a myriad of techniques at low power, and while a few studies have produced such beams at high power, none have considered the impact of amplification on the vector purity. Here we employ tools to study the amplification of VV beams and, in particular, the purity of such modes. We outline a versatile toolbox for such investigations and demonstrate its use in the general case of VV beams through a birefringent gain medium. Intriguingly, we show that it is possible to enhance the purity of such beams during amplification, paving the way for high-brightness VV beams, a requirement for their use in high-power applications such as optical communication and laser-enabled manufacturing.

We demonstrate the efficacy of wave-interference-based light trapping and carrier transport in parabolic-pore photonic-crystal, thin-crystalline silicon ($c$-Si) solar cells to achieve above 29% power conversion efficiencies. Using a rigorous solution of Maxwell’s equations through a standard finite-difference time domain scheme, we optimize the design of the vertical-parabolic-pore photonic crystal (PhC) on a $10\text{−}\mu \mathrm{m}$-thick $c$-Si solar cell to obtain a maximum achievable photocurrent density (MAPD) of $40.6\mathrm{mA}/{\mathrm{cm}}^2$ beyond the ray-optical, Lambertian light-trapping limit. For a slanted-parabolic-pore PhC that breaks $x\text{−}y$ symmetry, improved light trapping occurs due to better coupling into parallel-to-interface refraction modes. We achieve the optimum MAPD of $41.6\mathrm{mA}/{\mathrm{cm}}^2$ for a tilt angle of 10° with respect to the vertical axis of the pores. This MAPD is further improved to $41.72\mathrm{mA}/{\mathrm{cm}}^2$ by introducing a 75-nm ${\mathrm{SiO}}_2$ antireflective coating on top of the solar cell. We use this MAPD and the associated charge-carrier generation profile as input for a numerical solution of Poisson’s equation coupled with semiconductor drift-diffusion equations using a Shockley-Read-Hall and Auger recombination model. Using experimentally achieved surface recombination velocities of $10\mathrm{cm}/\mathrm{s}$, we identify semiconductor doping profiles that yield power conversion efficiencies over 29%. Practical considerations of additional upper-contact losses suggest efficiencies close to 28%. This improvement beyond the current world record is largely due to an open-circuit voltage approaching 0.8 V enabled by reduced bulk recombination in our thin silicon architecture while maintaining a high short-circuit current through wave-interference-based light trapping.

We describe and demonstrate an alternative energy-harvesting technology based on a microfluidic realization of a Wimshurst influence machine. The prototype device converts the mechanical energy of a pressure-driven flow into electrical energy, using a multiphase system composed of droplets of liquid mercury surrounded by insulating oil. Electrostatic induction between adjacent metal droplets drives charge through external electrode paths, resulting in continuous charge amplification and collection. We demonstrate a power output of 4 nW from the initial prototype and present calculations suggesting that straightforward device optimization could increase the power output by more than 3 orders of magnitude. At that level, the power efficiency of this energy-harvesting mechanism, limited by viscous dissipation, could exceed 90%. The microfluidic context enables straightforward scaling and parallelization, as well as hydraulic matching to a variety of ambient mechanical energy sources, such as human locomotion.

Spin-transfer nano-oscillators (STNOs) are nanosized microwave signal generators based on spin-transfer torque and the magnetoresistance effect. So far, the low output power of STNOs is one of the key restrictive factors. Fabrication and synchronization of a multiple STNO array in one device is a promising way to increase the output power. However, previous studies have shown that only a limited number of STNOs achieve synchronization due to the complex coupling mechanism. In this work, we propose an alternative structure of STNOs based on the repulsion between the domain wall and the Skyrmion. It is found that the frequency tunability of this kind of STNO reaches up to 1.9 GHz. Moreover, we numerically demonstrate that the integrated arrays of STNOs can export synchronous signals, which is promising to potentially increase their total power. Our results provide alternatives for designing of Skyrmion-based devices and further improving the output power of STNOs.

We introduce a resistance measurement method that is useful in characterizing materials with both surface and bulk conduction, such as three-dimensional topological insulators. The transport geometry for this resistance measurement configuration consists of one current lead as a closed loop that fully encloses the other current lead on the surface, and two voltage leads that are both placed outside the loop. We show that, in the limit where the transport is dominated by the surface conductivity of the material, the four-terminal resistance measured from such a transport geometry is proportional to ${\sigma }_b/{\sigma }_s^2$, where ${\sigma }_b$ and ${\sigma }_s$ are the bulk and surface conductivities of the material, respectively. We call this type of measurement inverted resistance measurement, as the resistance scales inversely with the bulk resistivity. We discuss possible implementations of this method by performing numerical calculations on different geometries and introduce strategies to extract the bulk and surface conductivities. We also demonstrate inverted resistance measurements on ${\mathrm{SmB}}_6$, a topological Kondo insulator, using both single-sided and coaxially aligned double-sided Corbino disk transport geometries. Using this method, we are able to measure the bulk conductivity, even at low temperatures, where the bulk conduction is much smaller than the surface conduction in this material.

Orientation effects on the specific resistance of copper grain boundaries are studied systematically with two different atomistic tight-binding methods. A methodology is developed to model the specific resistance of grain boundaries in the ballistic limit using the embedded atom model, tight- binding methods, and nonequilibrium Green’s functions. The methodology is validated against first-principles calculations for thin films with a single coincident grain boundary, with 6.4% deviation in the specific resistance. A statistical ensemble of 600 large, random structures with grains is studied. For structures with three grains, it is found that the distribution of specific resistances is close to normal. Finally, a compact model for grain-boundary-specific resistance is constructed based on a neural network.

We employ the phase-field method to assess electromigration (EM) damage in wide polycrystalline interconnects due to grain-boundary grooving. An interplay of surface and grain-boundary diffusion is shown to drastically influence the mode of progressive EM damage. Rapid atomic transport along the surface leads to shape-preserving surface drift reminiscent of Blech drift-velocity experiments. On the other hand, a comparatively faster grain-boundary transport localizes the damage, resulting in the proliferation of intergranular slits with a shape-preserving tip. At steady state, the two regimes exhibit exponents of 1 and $3/2$, respectively, in Black’s law. While surface drift obeys an inverse scaling with grain size, slits exhibit a direct relationship at small sizes, with the dependence becoming weaker at larger ones. Furthermore, we explain the influence of curvature- or EM-mediated healing fluxes running along the surface on groove replenishment. Insights derived from phase-field simulations of EM in bicrystals are extended to investigate the multiphysics of mixed-mode damage of a polycrystalline interconnect line that is characterized by a drift of small grain surfaces, slit propagation, and coarsening. The triple and quadruple junctions are identified as prominent sites of failure.

We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) ${\mathrm{Bi}}_2{\mathrm{Se}}_3$ by utilizing a nonvolatile electrostatic gating via corona charging of electret polymers. Sufficient electric field can be imparted to a polymer-TI bilayer to result in significant electron density depletion, even without the continuous connection of a gate electrode or the chemical modification of the TI. We show that the Fermi level of ${\mathrm{Bi}}_2{\mathrm{Se}}_3$ is shifted toward the Dirac point with this method. Using terahertz spectroscopy, we find that the surface chemical potential is lowered into the bulk band gap (approximately 50 meV above the Dirac point and 170 meV below the conduction-band minimum), and it is stabilized in the intrinsic regime while enhancing electron mobility. The mobility of surface state electrons is enhanced to a value as high as approximately $1600{\mathrm{cm}}^2/\mathrm{V}\mathrm{s}$ at 5 K.

The generation of true optical time standards will require the conversion of the highly stable optical-frequency output of an optical atomic clock to a high-fidelity time output. We demonstrate a comb-based clockwork that phase-coherently integrates $\sim 7\times {10}^{20}$ optical cycles of an input optical frequency to create a coherent time output. We verify the underlying stability of the optical timing system by comparing two comb-based clockworks with a common input optical frequency and show $<20\mathrm{fs}$ total time drift over the 37-day measurement period. Both clockworks also generate traditional timing signals including an optical pulse per second and a 10-MHz rf reference. The optical pulse-per-second time outputs remain synchronized to 240 attoseconds (240 as) at 1000 s. The phase-coherent 10-MHz rf outputs are stable to near a part in ${10}^{19}$. Fault-free timekeeping from an optical clock to femtosecond level over months is an important step in replacing the current microwave time standard by an optical standard.

Strong photon-photon interactions are a required ingredient for deterministic two-photon optical quantum logic gates. Multiphoton transitions in dense atomic vapors have been shown to be a promising avenue for producing such interactions. The strength of a multiphoton interaction can be enhanced by conducting the interaction in highly confined geometries such as small-cross-section optical waveguides. We demonstrate, both experimentally and theoretically, that the strength of such interactions scale only with the optical mode diameter, $d$, not $d^2$ as might be initially expected. This weakening of the interaction arises from atomic motion inside the waveguides. We create an interaction between two optical signals, at 780 and 776 nm, using the $5S_{1/2}\to 5D_{5/2}$ two-photon transition in rubidium vapor within a range of hollow-core fibers with different core sizes. The interaction strength is characterized by observing the absorption and phase shift induced on the 780-nm beam, which is in close agreement with theoretical modeling that accounts for the atomic motion inside the fibers. These observations demonstrate that transit-time effects upon multiphoton transitions are of key importance when engineering photon-photon interactions within small-cross-section waveguides that might otherwise be thought to lead to enhanced optical nonlinearity through increased intensities.