Exotic optoelectronic and transport properties of two-dimensional (2D) materials have made them the focus of several application-oriented studies. This work is a feasibility study of such 2D structures based on group-V elements as passivating/transparent conducting interlayers in photovoltaic applications. We present a detailed first-principles study of the optoelectronic and carrier-transport properties of the two most stable and experimentally synthesized allotropes ( and ) of , , and . Monolayers of both allotropes exhibit a band gap for all three elements, which decreases and eventually disappears beyond a critical number of layers (thickness). Interestingly, this transition from semiconducting to metallic behavior is found to be very different for as compared with and . -Arsenene remains semiconducting until the pentalayered structure, while -arsenene becomes metallic beyond the bilayered structure. All other allotropes of and are semiconducting only for a monolayer. The in-plane conductivity of the monolayered structures lies in the range from to , and increases with increasing layer thickness. On the other hand, the monolayers exhibit the lowest reflectivity ( or less), which increases to more than 25%, 50%, and 40% in the visible region for pentalayers of - and -arsenene, antimonene, and bismuthene, respectively. Trilayered -arsenene, with a figure of merit () of approximately , is a promising candidate as a transparent conducting layer in solar-cell applications. Such combined evaluation of 2D materials based on their optoelectronic and transport properties is quite useful for future experimental investigations.