Microwave-Assisted Spectroscopy Technique for Studying Charge State in Nitrogen-Vacancy Ensembles in Diamond
D.P.L. Aude Craik, P. Kehayias, A.S. Greenspon, X. Zhang, M.J. Turner, J.M. Schloss, E. Bauch, C.A. Hart, E.L. Hu, and R.L. Walsworth
Phys. Rev. Applied 14, 014009 (2020) - Published 6 July, 2020
We introduce a microwave-assisted spectroscopy technique to determine the relative ratio of fluorescence emitted by nitrogen-vacancy (N-) centers in diamond that are negatively charged () and neutrally charged () and present its application to studying spin-dependent ionization in N- ensembles and enhancing N--magnetometer sensitivity. Our technique is based on selectively modulating the fluorescence with a spin-state-resonant microwave drive to isolate, in situ, the spectral shape of the and contributions to an N--ensemble sample’s fluorescence. As well as serving as a reliable means to characterize the charge state, the method can be used as a tool to study spin-dependent ionization in N- ensembles. As an example, we apply the microwave technique to a high-N--density diamond sample and find evidence for an additional spin-dependent ionization pathway, which we present here alongside a rate-equation model of the data. We further show that our method can be used to enhance the contrast of optically detected magnetic resonance (ODMR) on N- ensembles and may lead to significant sensitivity gains in N- magnetometers dominated by technical noise sources, especially where the population is large. With the high-N--density diamond sample investigated here, we demonstrate an up to 4.8-fold enhancement in the ODMR contrast. We also propose a second postprocessing method of increasing the ODMR contrast in shot-noise-limited applications. The techniques presented here may also be applied to other solid-state defects, as long as their fluorescence can be selectively modulated by means of a microwave drive. We demonstrate this utility by applying our method to isolate room-temperature spectral signatures of the V2-type silicon vacancy from an ensemble of V1 and V2 silicon vacancies in silicon carbide.


