Articles Citing

Electrically and optically active charge carrier traps in silicon-doped few-layer GaSe

M. Bissolo1,*, R. Li1,†, M. Ogura2, Z. Sofer3, S. Polesya2, D. Han4, A. W. Holleitner1, C. Kastl1, G. Koblmüller1,5 et al.

H. Ebert2, E. Zallo1,‡, and J. J. Finley1

  • *Contact author: michele.bissolo@tum.de
  • †Present address: Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187 Dresden, Germany.
  • ‡Contact author: eugenio.zallo@tum.de

Mehmet Isik

ACS Applied Optical Materials 4 2787 (2026)

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