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Distinct low-frequency noise fingerprints of filamentary and interfacial switching in La2NiO4+δ-based RRAM

Yingxin Li1,*,†, Demian Ranftl2,†, Aleksandra Koroleva3, Tristan Stadler2, Philipp Schreyer1, Taewook Kim1, Yu Duan1, Alexey Arzumanov1, Mónica Burriel3 et al.

Jens Müller2, Lambert Alff1, and Eszter Piros1

  • *Contact author: yingxin.li@tu-darmstadt.de
  • †These authors contributed equally to this work.
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Phys. Rev. Applied 26, 044092 – Published 29 October, 2026

DOI: https://doi.org/10.1103/z81t-dr2y

Abstract

This work investigates the noise characteristics of filamentary- and interfacial-type resistive random-access memory devices in a single material system based on La2NiO4+δ, using low-frequency noise spectroscopy across different resistance states, read voltages, and device sizes. We observe a clear difference in the noise properties of the two device types: (i) filamentary devices exhibit overall elevated noise levels compared with the interfacial ones, (ii) the relative noise magnitude between high (HRS) and low resistance states (LRS) in the two device types is inverted: elevated noise is present in the HRS of filamentary devices and in the LRS of interfacial ones and vice versa, (iii) no area dependence of noise properties is observed for the filamentary devices, whereas interfacial devices show a size-dependent frequency exponent and noise magnitude scaling. For both switching mechanisms, a systematic two-stage noise suppression with increasing read voltages is observed, which is found to be correlated with the transition from ohmic to space-charge-limited conduction. Our study links noise characteristics to the underlying switching and conduction mechanisms of oxygen vacancy migration-based memories.

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Phys. Rev. Applied 26, 044092– Published 29 October, 2026
  • Received 24 March 2026
  • Revised 10 June 2026
  • Accepted 29 September 2026
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Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.

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