Enhancement of perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction in cobalt-based systems through interfacial engineering
Phys. Rev. Applied 26, 044030 – Published 9 October, 2026
DOI: https://doi.org/10.1103/pz1p-3rh1
Abstract
Interfacial engineering provides an effective route to tailor chiral magnetic interactions in thin-film heterostructures relevant for spintronic applications. In this work, we investigate the influence of top capping layers on perpendicular magnetic anisotropy (PMA) and interfacial Dzyaloshinskii-Moriya interaction (iDMI) in ultrathin Co films. By depositing Ru, Ta, W, and Pt on a 1.7 nm Co layer, we selectively modify the top interface while preserving the intrinsic growth of the ferromagnetic layer. Ferromagnetic resonance, Brillouin light scattering, vibrating sample magnetometry, and magneto-optical Kerr effect measurements are used to quantify the magnetic anisotropy and chiral exchange. We find that Ta capping yields a strong PMA, leading to perpendicular, spontaneously oriented magnetization and an iDMI of , exceeding that obtained with W. In contrast, Ru and Pt capping layers lead to in-plane and canted magnetization spontaneously, respectively. The large PMA observed in Ta-capped films allows increased Co thickness while maintaining perpendicular anisotropy, which is expected to enhance spin polarization. These results demonstrate that top-interface engineering enables simultaneous tuning of magnetic anisotropy and iDMI, providing a practical pathway toward the design of magnetic tunnel junctions incorporating stabilized skyrmions.
