The optoelectronic heterojunction devices are one of the hot research topics for realizing artificial vision bionics. However, simultaneously achieving nonvolatile storage, monolithic scalability, and long-term stability remains a significant challenge. Here, we propose an artificial optoelectronic synaptic device based on the AlSb/Al(As, Sb) and InAs/In(As, Sb) superlattice (SL) heterojunctions, which can integrate sensing and storage functions. By employing the strain-compensated molecular beam epitaxy technique, a barrier SL heterostructure introducing localized trap centers was constructed. This architecture efficiently regulates transport carriers under the stimulation of visible light (405 nm), leading to long-term persistent photoconductivity. The device displays biological synaptic functions, including short- and long-term plasticity, paired-pulse facilitation (PPF), and learning-experience behaviors similar to those of human beings. Especially, it demonstrates a high PPF index of 138% and favorable process compatibility. Furthermore, we fabricated a $5\times 5$ optoelectronic synaptic array and successfully demonstrated the processes of visual imaging and memory functions, as well as neuromorphic visual preprocessing with improved processing efficiency and accuracy in subsequent image recognition tasks. This work underscores the potential of III–V SL heterostructures as a scalable platform for next-generation biomimetic visual perception systems.

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• Biomimetic & bio-inspired materials
• Optoelectronics
• Synapses
• Vision
• Artificial neural networks
• III-V semiconductors
• Photodetectors
• Superlattices