Spin logic devices provide a promising route toward ultralow-power and nonvolatile information processing. In this work, we demonstrate field-free spin-orbit torque-induced asymmetric magnetization switching in in-plane anisotropy (IMA) and perpendicular magnetic anisotropy heterostructures, characterized by different critical switching currents under opposite current polarities. Combined experiments and macrospin simulations reveal that the asymmetric switching originates from an in-plane effective field $H_y$, which breaks the ${\mathcal{M}}_{yz}$ mirror symmetry of the system. By controlling the magnetization direction of the IMA layer, both the switching polarity and bias direction can be tuned. Building on four distinct types of asymmetric switching behaviors, we realize a reconfigurable spin logic operation within a single Hall-bar device. These results clarify the physical origin of asymmetric magnetization switching and demonstrate an approach for realizing reconfigurable spin logic devices.

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• Magnetic anisotropy
• Magnetic interactions
• Magnetization switching
• Spin-orbit torque
• Devices for digital logic, storage & processing
• Magnetic multilayers
• Landau-Lifschitz-Gilbert equation
• Molecular beam epitaxy