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Tailoring the properties of YBa2Cu3O7−δ thin films by 30-keV He+ irradiation: An enabling route to superconducting-device nanopatterning

Bernd Aichner1,†, Simon Koch2,†, Philipp A. Korner1,†, Max Karrer2, Katja Wurster2, Christoph Schmid2, Ulrich Kentsch3, Reinhold Kleiner2, Edward Goldobin2 et al.

Dieter Koelle2 and Wolfgang Lang1,*

  • *Contact author: wolfgang.lang@univie.ac.at
  • †These authors contributed equally to this work.
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Phys. Rev. Applied 26, 044076 – Published 26 October, 2026

DOI: https://doi.org/10.1103/7dhm-9tvs

Abstract

Focused helium ion beam (He-FIB) irradiation with 30-keV ions is a key tool for nanoscale patterning and defect engineering in high-transition temperature (Tc) cuprate superconducting devices, yet its usable fluence window is constrained by the competing requirements of reliable superconductivity suppression and minimal structural degradation. In this work, we provide a comprehensive dataset on the effects of large-area 30-keV He+ ion exposure on the electric transport and superconducting properties of epitaxial YBa2Cu3O7−δ (YBCO) thin films. X-ray diffraction shows a fluence-driven loss of crystalline order accompanied by an out-of-plane lattice expansion and an orthorhombic-to-tetragonal transition, culminating in predominant amorphization at the highest fluence of 1×1016  cm−2. Raman spectra exhibit increasing disorder while lacking signatures of oxygen depletion, indicating that irradiation mainly generates oxygen-related Frenkel defects rather than changing the carrier concentration. Consistently, with increasing fluence, the normal-state resistivity ρN(T) at temperature T above Tc increases strongly, while ∂ρN/∂T remains nearly unchanged at moderate fluence. The suppression of Tc is accurately described by Abrikosov–Gor’kov pair breaking and reaches complete quenching of superconductivity at 4.5×1015  cm−2. The anisotropic upper critical fields decrease approximately exponentially with increasing fluence; the vortex activation energy is reduced, and the anisotropy drops, in contrast to oxygen-depleted YBCO. Hall-angle analysis confirms a nearly constant carrier density but a systematic increase in defect scattering and reduced mobility, consistent with a crossover toward the dirty limit at high fluence. These results establish quantitative fluence thresholds and a practical operational window for He-FIB nanopatterning of YBCO quantum circuits.

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Phys. Rev. Applied 26, 044076– Published 26 October, 2026
  • Received 12 June 2026
  • Revised 1 September 2026
  • Accepted 2 October 2026
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