Articles Citing

Ion track formation via electric-field-enhanced energy deposition

Zikang Ge^1,*, Jinhao Hu^1,*, Shengyuan Peng¹, Wei Kang², Xiaofei Shen ³, Yanbo Xie^4,†, and Jianming Xue ^1,2,‡

¹State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, China
²CAPT and HEDPS, College of Engineering, Peking University, Beijing 100871, China
³Center for Applied Physics and Technology, HEDPS, and SKLNPT, School of Physics, Peking University, Beijing 100871, China
⁴Institute of Extreme Mechanics, School of Aeronautics, Northwestern Polytechnical University, Xi'an 710072, China

^*These authors contributed equally to this work.
^†Contact author: ybxie@nwpu.edu.cn
^‡Contact author: jmxue@pku.edu.cn

Unveiling the role of bulk ionized charge in single-event leakage degradation of SiC Schottky diodes

Zikang Ge, Xinyu Xu, Jinhao Hu, Xingze Yang, Leshan Qiu, Chenrui Zhang, Yunbiao Zhao, and Jianming Xue

Microelectronics Journal 169 107055 (2026)

Anisotropic Structural Response of NdGaO3 Single Crystals to 147 MeV Kr-Ion Irradiation

Zhakyp T. Karipbayev, Miramgul S. Tokasheva, Aizat Bakytkyzy, Amangeldy M. Zhunusbekov, Askhat Kakimov, Marina Konuhova, Sofija Konuhova, Vladislavs Bezrukovs, and Anatoli I. Popov

Materials 19 4022 (2026)

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Articles Citing

Ion track formation via electric-field-enhanced energy deposition

Unveiling the role of bulk ionized charge in single-event leakage degradation of SiC Schottky diodes

Anisotropic Structural Response of NdGaO3 Single Crystals to 147 MeV Kr-Ion Irradiation

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