Articles Citing

Quantum Hall effect and zero-resistance plateau in bulk HgTe

M. L. Savchenko ^1,2,*, D. A. Kozlov ^3,4,†, S. S. Krishtopenko ⁵, N. N. Mikhailov ⁴, S. A. Dvoretsky⁴, Z. D. Kvon^4,6, A. Pimenov ¹, and D. Weiss ³

¹Institute of Solid State Physics, Vienna University of Technology, 1040 Vienna, Austria
²Microsystems Division, Silicon Austria Labs, 9524 Villach, Austria
³Experimental and Applied Physics, University of Regensburg, D-93040 Regensburg, Germany
⁴Institute of Semiconductor Physics, Novosibirsk 630090, Russia
⁵Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Université de Montpelier, Montpellier, France
⁶Physics Department, Novosibirsk State University, Novosibirsk 630090, Russia

^*Contact author: maksim.savchenko@silicon-austria.com
^†Contact author: Dmitriy.Kozlov@physik.uni-regensburg.de

Drop in the Hall Resistance As a Possible Indication of a Transition to a Zero-Filling-Factor Quantum Hall Effect State in a HgTe/CdHgTe Double Quantum Well

M. V. Yakunin, V. N. Neverov, A. S. Bogolyubskii, S. D. Popov, K. V. Turutkin, A. Yu. Pavlova, S. V. Gudina, N. S. Sandakov, N. N. Mikhailov, and S. A. Dvoretsky

Jetp Lett. 124 291 (2026)

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Articles Citing

Quantum Hall effect and zero-resistance plateau in bulk HgTe

Drop in the Hall Resistance As a Possible Indication of a Transition to a Zero-Filling-Factor Quantum Hall Effect State in a HgTe/CdHgTe Double Quantum Well

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