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Interaction-controlled transport in a two-dimensional massless-massive Dirac system: Transition from degenerate to nondegenerate regimes

A. D. Levin1, G. M Gusev1, F. G. G. Hernandez1, E. B. Olshanetsky2,3, V. M. Kovalev2,4,5, M. V. Entin2,3, and N. N. Mikhailov2,3

  • 1Departamento de Física dos Materias e Mecânica, Instituto de Física da Universidade de São Paulo, 135960-170 São Paulo, SP, Brazil
  • 2Institute of Semiconductor Physics, Novosibirsk 630090, Russia
  • 3Physics Department, Novosibirsk State University, Novosibirsk 630090, Russia
  • 4Department of Semiconducting Devices and Microelectronics, Novosibirsk State Technical University, Novosibirsk 630073, Russia
  • 5Abrikosov Center for Theoretical Physics, Moscow Institute of Physics and Technology, Dolgoprudny, 141701, Russia

Phys. Rev. Research 6, 023121 – Published 3 May, 2024

DOI: https://doi.org/10.1103/PhysRevResearch.6.023121

Abstract

The resistivity of two-dimensional (2D) metals generally exhibits insensitivity to electron-electron scattering. However, it is worth noting that Galilean invariance may not hold true in systems characterized by a spectrum containing multiple electronic branches or in scenarios involving electron-hole plasma. In the context of this paper, we focus on 2D electrons confined within a triple quantum well (TQW) based on HgTe. This system displays a coexistence of energy bands featuring both linear and paraboliclike spectra at low energy and, therefore, lacks the Galilean invariance. This paper employs a combined theoretical and experimental approach to investigate the transport properties of this two-component system across various regimes. By manipulating carrier density and temperature, we tune our system from a fully degenerate regime, where resistance follows a temperature-dependent behavior proportional to T2 to a regime where both types of electrons adhere to Boltzmann statistics. In the nondegenerate regime, electron interactions lead to resistance that is weakly dependent on temperature. Notably, our experimental observations closely align with the theoretical predictions derived in this paper. In this paper, we establish the HgTe-based TQW as a promising platform for exploring different interaction-dominant scenarios for the massless-massive Dirac system.

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References (37)

  1. H. K. Pal, V. I. Yudson, and D. L. Maslov, Resistivity of non-invariant Fermi- and non-Fermi liquids, Lith. J. Phys. 52, 142 (2012).
  2. K. E. Nagaev and A. A. Manoshin, Electron-electron scattering and transport properties of spin-orbit coupled electron gas, Phys. Rev. B 102, 155411 (2020).
  3. K. E. Nagaev, Electron-electron scattering and conductivity of disordered systems with a Galilean-invariant spectrum, Phys. Rev. B 106, 085411 (2022)
  4. S. S. Murzin, S. I. Dorozhkin, G. Landwehr, and A. C. Gossard, Effect of hole-hole scattering on the conductivity of the two-component 2D hole gas in GaAs/(AlGa)As heterostructures, JETP Lett. 67, 113 (1998).
  5. V. Kravchenko, N. Minina, A. Savino. P. Hansen, C. B. Sorensen, and W. Kraak, Positive magnetoresistance and hole-hole scattering in GaAs/Al0.5Ga0.5As heterostructures under uniaxial compression, Phys. Rev. B 59, 2376 (1999).
  6. E. H. Hwang and S. Das Sarma, Temperature dependent resistivity of spin-split subbands in GaAs two-dimensional hole systems, Phys. Rev. B 67, 115316 (2003).
  7. E. B. Olshanetsky, Z. D. Kvon, M. V. Entin, L. I. Magarill, N. N. Mikhailov, and S. A. Dvoretsky, Scattering processes in a two-dimensional semimetal, JETP Lett. 89, 290 (2009).
  8. M. V. Entin, L. I. Magarill, E. B. Olshanetsky, Z. D. Kvon, N. N. Mikhailov, and S. A. Dvoretsky, The effect of electron-hole scattering on transport properties of a 2D semimetal in the HgTe quantum well J. Exp. Theor. Phys. 117, 933 (2013).
  9. C. Tan, D. Y. H. Ho, L. Wang, J. I. A. Li, I. Yudhistira, D. A. Rhodes, T. Taniguchi, K. Watanabe, K. Shepard, P. L. McEuen et al., Dissipation-enabled hydrodynamic conductivity in a tunable bandgap semiconductor, Sci. Adv. 8, eabi8481 (2022).
  10. D. A. Bandurin, A. Principi, I. Y. Phinney, T. Taniguchi, K. Watanabe, and P. Jarillo-Herrero, Interlayer electron-hole friction in tunable twisted bilayer graphene semimetal, Phys. Rev. Lett. 129, 206802 (2022).
  11. G. M. Gusev, A. D. Levin, E. B. Olshanetsky, Z. D. Kvon, V. M. Kovalev, M. V. Entin, and N. N. Mikhailov, Interaction-dominated transport in two-dimensional conductors: From degenerate to partially degenerate regime, Phys. Rev. B 109, 035302 (2024).
  12. B. Büttner, C. X. Liu, G. Tkachov, E. G. Novik, C. Brne, H. Buhmann, E. M. Hankiewicz, P. Recher, B. Trauzettel, S. C. Zhang et al., Single valley Dirac fermions in zero-gap HgTe quantum wells, Nat. Phys. 7, 418 (2011).
  13. D. A. Kozlov, Z. D. Kvon, N. N. Mikhailov, and S. A. Dvoretskii, Weak localization of Dirac fermions in HgTe quantum wells, JETP Lett. 96, 730 (2013).
  14. G. M. Gusev, D. A. Kozlov, A. D. Levin, Z. D. Kvon, N. N. Mikhailov, and S. A. Dvoretsky, Robust helical edge transport at ν=0 quantum Hall state, Phys. Rev. B 96, 045304 (2017).
  15. S. S. Krishtopenko, W. Desrat, K. E. Spirin, C. Consejo, S. Ruffenach, F. Gonzalez-Posada, B. Jouault, W. Knap, K. V. Maremyanin, V. I. Gavrilenko et al., Massless Dirac fermions in III-V semiconductor quantum wells, Phys. Rev. B 99, 121405(R) (2019).
  16. Z. D. Kvon, E. B. Olshanetsky, D. A. Kozlov N. N. Mikhailov, and S. A. Dvoretsky, Two-dimensional electron-hole system in a HgTe-based quantum well, JETP Lett. 87, 502 (2008).
  17. A. Lucas and S. Das Sarma, Electronic hydrodynamics and the breakdown of the Wiedemann-Franz and Mott laws in interacting metals, Phys. Rev. B 97, 245128 (2018).
  18. A. Levchenko, S. Li, and A. V. Andreev, Giant magnetoresistance in weakly disordered non-Galilean invariant conductors, Phys. Rev. B 109, 075401 (2024).
  19. M. Müller, J. Schmalian, and L. Fritz, Graphene: A nearly perfect fluid, Phys. Rev. Lett. 103, 025301 (2009).
  20. M. König, S. Wiedmann, C. Brune, A. Roth, H. Buhmann, L. W. Molenkamp, X.-L. Qi, and S.-C. Zhang, Quantum spin Hall insulator state in HgTe quantum wells, Science 318, 766 (2007).
  21. M. Z. Hasan and C. L. Kane, Colloquium: Topological insulators, Rev. Mod. Phys. 82, 3045 (2010).
  22. Z. D. Kvon, D. A. Kozlov, E. B. Olshanetsky, G. M. Gusev, N. N. Mikhailov, and S. A. Dvoretsky, Topological insulators based on HgTe, Phys. Usp. 63, 629 (2020).
  23. G. M. Gusev, Z. D. Kvon, E. B. Olshanetsky, N. N. Mikhailov, Mesoscopic transport in two-dimensional topological insulators, Solid State Commun. 302, 113701 (2019).
  24. L. G. Gerchikov and A. V. Subashiev, Interface states in subband structure of semiconductor quantum wells, Phys. Status Solidi B 160, 443 (1990).
  25. C. L. Kane and E. J. Mele, Z2 topological order and the quantum spin Hall effect, Phys. Rev. Lett. 95, 146802 (2005).
  26. B. A. Bernevig and S. C. Zhang, Quantum spin Hall effect, Phys. Rev. Lett. 96, 106802 (2006).
  27. B. A. Bernevig, T. L. Hughes, and S. C. Zhang, Quantum spin Hall effect and topological phase transition in HgTe quantum wells, Science 314, 1757 (2006).
  28. S. S. Krishtopenko, and F. Teppe, Quantum spin Hall insulator with a large bandgap, Dirac fermions, and bilayer graphene analog, Sci. Adv. 4, eaap7529 (2018).
  29. P. Michetti, J. C. Budich, E. G. Novik, and P. Recher, Tunable quantum spin Hall effect in double quantum wells, Phys. Rev. B 85, 125309 (2012).
  30. G. J. Ferreira, D. R. Candido, F. G. G. Hernandez, G. M. Gusev, E. B. Olshanetsky, N. N. Mikhailov and S. A. Dvoretsky, Engineering topological phases in triple HgTe/CdTe quantum wells, Sci. Rep. 12, 2617 (2022).
  31. G. M. Gusev, E. B. Olshanetsky, F. G. G. Hernandez, O. E. Raichev, N. N. Mikhailov, and S. A. Dvoretsky, Two-dimensional topological insulator state in double HgTe quantum well, Phys. Rev. B 101, 241302(R) (2020).
  32. G. M. Gusev, E. B. Olshanetsky, F. G. G. Hernandez, O. E. Raichev, N. N. Mikhailov, and S. A. Dvoretsky, Multiple crossings of Landau levels of two-dimensional fermions in double HgTe quantum wells, Phys. Rev. B 103, 035302 (2021).
  33. Ye. O. Melezhik, J. V. Gumenjuk-Sichevska, and F. F. Sizov, Electron relaxation and mobility in the inverted band quantum well CdTe/Hg1−xCdxTe/CdTe, Semicond. Phys. Quantum Electron. Optoelectron. 17, 85 (2014).
  34. J. Appel and A. W. Overhauser, Cyclotron resonance in two interacting electron systems with application to Si inversion layers, Phys. Rev. B 18, 758 (1978).
  35. H. Liu and D. Culcer, Coulomb drag in topological materials, J. Phys. Chem. Solids 128, 54 (2019).
  36. M. Polini and A. K. Geim, Viscous electron fluids, Phys. Today 73(6), 28 (2020).
  37. Y. Nam, D.-K. Ki, D. Soler-Delgado, and A. F. Morpurgo, Electron-hole collision limited transport in charge-neutral bilayer graphene, Nat. Phys. 13, 1207 (2017).

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