Reuse & Permissions

It is not necessary to obtain permission to reuse this article or its components as it is available under the terms of the Creative Commons Attribution 4.0 International license. This license permits unrestricted use, distribution, and reproduction in any medium, provided attribution to the author(s) and the published article's title, journal citation, and DOI are maintained. Please note that some figures may have been included with permission from other third parties. It is your responsibility to obtain the proper permission from the rights holder directly for these figures.

Export citation

Export citation

Choose format for download:

Download Citation
  • Open Access

Realization of exciton-polariton condensation in GaAs-based microcavity grown by metalorganic chemical vapor deposition

Daegwang Choi, Min Park, Chan-Young Sung, Hyoungsoon Choi, and Yong-Hoon Cho*

  • Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea

  • *yonghcho@kaist.ac.kr

Phys. Rev. Research 4, 033188 – Published 6 September, 2022

DOI: https://doi.org/10.1103/PhysRevResearch.4.033188

Abstract

Metalorganic chemical vapor deposition (MOCVD) has not been often used for studying exciton-polariton condensation and developing polaritonic devices, although it is a powerful mass productive method for practical applications. Here, we demonstrate that the MOCVD-grown GaAs-based microcavity can realize the nonequilibrium condensation of exciton-polariton. We obtained the Rabi splitting values of 10.1 meV in the angle-resolved reflectance spectrum from the MOCVD-grown microcavity. And, we also measured the angle-resolved photoluminescence depending on pumping power to observe condensation behaviors. Furthermore, we found that the occupancy distributions of polaritons are in a nonequilibrium state by fitting Bose-Einstein distributions. To realize the strong coupling and exciton-polariton condensation, we reduced the linewidth broadening of photoluminescence from quantum wells by optimizing growth conditions and designs.

View figure in article

Physics Subject Headings (PhySH)

Article Text

Supplemental Material

References (42)

  1. J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. Keeling, F. M. Marchetti, M. H. Szymanska, R. Andre, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud, and S. Dang le, Bose-Einstein condensation of exciton polaritons, Nature (London) 443, 409 (2006).
  2. A. Amo, D. Sanvitto, F. P. Laussy, D. Ballarini, E. del Valle, M. D. Martin, A. Lemaitre, J. Bloch, D. N. Krizhanovskii, M. S. Skolnick, C. Tejedor, and L. Vina, Collective fluid dynamics of a polariton condensate in a semiconductor microcavity, Nature (London) 457, 291 (2009).
  3. K. G. Lagoudakis, M. Wouters, M. Richard, A. Baas, I. Carusotto, R. André, L. S. Dang, and B. Deveaud-Plédran, Quantized vortices in an exciton–polariton condensate, Nat. Phys. 4, 706 (2008).
  4. A. Amo, S. Pigeon, D. Sanvitto, V. Sala, R. Hivet, I. Carusotto, F. Pisanello, G. Leménager, R. Houdré, and E. Giacobino, Polariton superfluids reveal quantum hydrodynamic solitons, Science 332, 1167 (2011).
  5. T. Jacqmin, I. Carusotto, I. Sagnes, M. Abbarchi, D. D. Solnyshkov, G. Malpuech, E. Galopin, A. Lemaître J. Bloch, and A. Amo, Direct observation of Dirac cones and a flatband in a honeycomb lattice for polaritons, Phys. Rev. Lett. 112, 116402 (2014).
  6. H. Deng, G. Weihs, D. Snoke, J. Bloch, and Y. Yamamoto, Polariton lasing vs. photon lasing in a semiconductor microcavity, Proc. Natl. Acad. Sci. USA 100, 15318 (2003).
  7. C. Schneider, A. Rahimi-Iman, N. Y. Kim, J. Fischer, I. G. Savenko, M. Amthor, M. Lermer, A. Wolf, L. Worschech, and V. D. Kulakovskii, An electrically pumped polariton laser, Nature (London) 497, 348 (2013).
  8. S. Tsintzos, N. Pelekanos, G. Konstantinidis, Z. Hatzopoulos, and P. Savvidis, A GaAs polariton light-emitting diode operating near room temperature, Nature (London) 453, 372 (2008).
  9. T. Gao, P. S. Eldridge, T. C. H. Liew, S. I. Tsintzos, G. Stavrinidis, G. Deligeorgis, Z. Hatzopoulos, and P. G. Savvidis, Polariton condensate transistor switch, Phys. Rev. B 85, 235102 (2012).
  10. S. Klembt, T. Harder, O. Egorov, K. Winkler, R. Ge, M. Bandres, M. Emmerling, L. Worschech, T. Liew, and M. Segev, Exciton-polariton topological insulator, Nature (London) 562, 552 (2018).
  11. S. Ghosh and T. C. H. Liew, Quantum computing with exciton-polariton condensates, npj Quantum Inf. 6, 16 (2020).
  12. S. Christopoulos, G. B. H. Von Högersthal, A. Grundy, P. Lagoudakis, A. Kavokin, J. Baumberg, G. Christmann, R. Butté, E. Feltin, and J.-F. Carlin, Room-Temperature Polariton Lasing in Semiconductor Microcavities, Phys. Rev. Lett. 98, 126405 (2007).
  13. S. Kéna-Cohen and S. Forrest, Room-temperature polariton lasing in an organic single-crystal microcavity, Nat. Photonics 4, 371 (2010).
  14. R. Su, S. Ghosh, J. Wang, S. Liu, C. Diederichs, T. C. Liew, and Q. Xiong, Observation of exciton polariton condensation in a perovskite lattice at room temperature, Nat. Phys. 16, 301 (2020).
  15. J. Zhao, R. Su, A. Fieramosca, W. Zhao, W. Du, X. Liu, C. Diederichs, D. Sanvitto, T. C. Liew, and Q. Xiong, Ultralow threshold polariton condensate in a monolayer semiconductor microcavity at room temperature, Nano Lett. 21, 3331 (2021).
  16. R. Miller, D. Kleinman, W. Tsang, and A. Gossard, Observation of the excited level of excitons in GaAs quantum wells, Phys. Rev. B 24, 1134 (1981).
  17. H. Suchomel, S. Kreutzer, M. Jörg, S. Brodbeck, M. Pieczarka, S. Betzold, C. Dietrich, G. Sęk, C. Schneider, and S. Höfling, Room temperature strong coupling in a semiconductor microcavity with embedded AlGaAs quantum wells designed for polariton lasing, Opt. Express 25, 24816 (2017).
  18. C. Weisbuch, M. Nishioka, A. Ishikawa, and Y. Arakawa, Observation of the Coupled Exciton-Photon Mode Splitting in a Semiconductor Quantum Microcavity, Phys. Rev. Lett. 69, 3314 (1992).
  19. H. Deng, G. Weihs, C. Santori, J. Bloch, and Y. Yamamoto, Condensation of semiconductor microcavity exciton polaritons, Science 298, 199 (2002).
  20. R. Balili, V. Hartwell, D. Snoke, L. Pfeiffer, and K. West, Bose-Einstein condensation of microcavity polaritons in a trap, Science 316, 1007 (2007).
  21. H. Cao, S. Pau, Y. Yamamoto, and G. Björk, Exciton-polariton ladder in a semiconductor microcavity, Phys. Rev. B 54, 8083 (1996).
  22. G. Panzarini, L. C. Andreani, A. Armitage, D. Baxter, M. S. Skolnick, V. N. Astratov, J. S. Roberts, A. V. Kavokin, M. R. Vladimirova, and M. A. Kaliteevski, Exciton-light coupling in single and coupled semiconductor microcavities: Polariton dispersion and polarization splitting, Phys. Rev. B 59, 5082 (1999).
  23. J. Dickerson, E. Mendez, A. Allerman, S. Manotas, F. Agulló-Rueda, and C. Pecharromán, Enhancement of Rabi splitting in a microcavity with an embedded superlattice, Phys. Rev. B 64, 155302 (2001).
  24. A. V. Scherbakov, T. Berstermann, A. V. Akimov, D. R. Yakovlev, G. Beaudoin, D. Bajoni, I. Sagnes, J. Bloch, and M. Bayer, Ultrafast control of light emission from a quantum-well semiconductor microcavity using picosecond strain pulses, Phys. Rev. B 78, 241302(R) (2008).
  25. Y. Sun, P. Wen, Y. Yoon, G. Liu, M. Steger, L. N. Pfeiffer, K. West, D. W. Snoke, and K. A. Nelson, Bose-Einstein Condensation of Long-Lifetime Polaritons in Thermal Equilibrium, Phys. Rev. Lett. 118, 016602 (2017).
  26. P. Dapkus, A critical comparison of MOCVD and MBE for heterojunction devices, J. Cryst. Growth 68, 345 (1984).
  27. F. Koyama, Recent advances of VCSEL photonics, J. Lightwave Technol. 24, 4502 (2006).
  28. J. Pohl, G. D. Cole, U. Zeimer, M. Aspelmeyer, and M. Weyers, Reduction of absorption losses in MOVPE-grown AlGaAs Bragg mirrors, Opt. Lett. 43, 3522 (2018).
  29. V. Dimastrodonato, L. O. Mereni, R. J. Young, and E. Pelucchi, AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment, J. Cryst. Growth 312, 3057 (2010).
  30. A. V. Kavokin, J. J. Baumberg, G. Malpuech, and F. P. Laussy, Microcavities (Oxford University Press, New York, 2017), Vol. 21.
  31. G. C. DeSalvo, W. F. Tseng, and J. Comas, Etch rates and selectivities of citric acid/hydrogen peroxide on GaAs, Al0.3Ga0.7As, In0.2Ga0.8As, In0.53Ga0.47As, In0.52Al0.48As, and InP, J. Electrochem. Soc. 139, 831 (1992).
  32. K. Bacher and J. Harris Jr., A wet etching technique for accurate etching of GaAs/AlAs distributed Bragg reflectors, J. Electrochem. Soc. 142, 2386 (1995).
  33. J. Hopfield, Theory of the contribution of excitons to the complex dielectric constant of crystals, Phys. Rev. 112, 1555 (1958).
  34. M. Wouters, I. Carusotto, and C. Ciuti, Spatial and spectral shape of inhomogeneous nonequilibrium exciton-polariton condensates, Phys. Rev. B 77, 115340 (2008).
  35. H. G. Song, S. Choi, C. H. Park, S.-H. Gong, C. Lee, M. S. Kwon, D. G. Choi, K. Y. Woo, and Y.-H. Cho, Tailoring the potential landscape of room-temperature single-mode whispering gallery polariton condensate, Optica 6, 1313 (2019).
  36. P. Tsotsis, P. S. Eldridge, T. Gao, S. I. Tsintzos, Z. Hatzopoulos, and P. G. Savvidis, Lasing threshold doubling at the crossover from strong to weak coupling regime in GaAs microcavity, New J. Phys. 14, 023060 (2012).
  37. L. Tinkler, P. Walker, E. Clarke, D. Krizhanovskii, F. Bastiman, M. Durska, and M. Skolnick, Design and characterization of high optical quality InGaAs/GaAs/AlGaAs-based polariton microcavities, Appl. Phys. Lett. 106, 021109 (2015).
  38. M. Steger, G. Liu, B. Nelsen, C. Gautham, D. W. Snoke, R. Balili, L. Pfeiffer, and K. West, Long-range ballistic motion and coherent flow of long-lifetime polaritons, Phys. Rev. B 88, 235314 (2013).
  39. See Supplemental Material at http://link.aps.org/supplemental/10.1103/PhysRevResearch.4.033188 for more information about a tightly-focused pumping beam case and pumping power dependence of polariton condensates.
  40. S. A. Lourenço, M. A. T. da Silva, I. F. L. Dias, J. L. Duarte, E. Laureto, A. A. Quivy, and T. E. Lamas, Correlation between luminescence properties of AlxGa1−xAs/GaAs single quantum wells and barrier composition fluctuation, J. Appl. Phys. 101, 113536 (2007).
  41. A. Jasik, A. Wnuk, A. Wójcik-Jedlińska, R. Jakieła, J. Muszalski, W. Strupiński, and M. Bugajski, The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods, J. Cryst. Growth 310, 2785 (2008).
  42. R. Houdré, C. Weisbuch, R. Stanley, U. Oesterle, P. Pellandini, and M. Ilegems, Measurement of Cavity-Polariton Dispersion Curve from Angle-Resolved Photoluminescence Experiments, Phys. Rev. Lett. 73, 2043 (1994).

Outline

Information

Sign In to Your Journals Account

Filter

Filter

Article Lookup

Enter a citation