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Enhancing optically induced intersite spin transfer in antiferromagnetic-ferromagnetic ultrathin films

Ming-Shian Tsai1,2, Li-Han Chang1, Chun-Chia Tseng1, Kunchala Ramesh Babu3, Guang-Yu Guo3,4,*, Bo-Yao Wang2,†, and Ming-Chang Chen1,5,6,‡

  • *Contact author: gyguo@phys.ntu.edu.tw
  • †Contact author: bywang1735@cc.ncue.edu.tw
  • ‡Contact author: mingchang@mx.nthu.edu.tw

Phys. Rev. Research 8, 033114 – Published 27 July, 2026

DOI: https://doi.org/10.1103/zvd1-qm8s

Abstract

Antiferromagnetic (AFM) films play a crucial role in advanced spintronic devices by regulating adjacent ferromagnetic (FM) layers via interfacial exchange coupling. However, the impact of antiferromagnets on magnetic dynamics of FM films under ultrashort laser pulses remains largely unknown. Using ultrafast extreme ultraviolet high-harmonic pulses for element-specific magnetization probing, we investigate the femtosecond laser-induced magnetic dynamics in an ultrathin FM Co film with paramagnetic (PM) Cu capping versus AFM Mn capping. Surprisingly, we observe notably shorter demagnetization time for Co in the AFM Mn/FM Co system, approaching the excitation laser pulse duration. During the femtosecond demagnetization process of Co, Mn magnetization arises immediately, indicating a dominant photon-driven interfacial spin-transfer process consistent with optically induced intersite spin transfer (OISTR). Experimental results, supported by time-dependent density functional theory, reveal an increased OISTR magnitude at the Mn/Co interface by a factor of about 1.8 compared to the Cu/Co interface. Furthermore, the photon-driven interfacial contribution saturates at ∼1 nm, consistent with the short-range nature of OISTR. Remarkably, by utilizing AFM Mn as the adjacent material and adjusting its thickness, OISTR can contribute to ∼45% of the demagnetization in ultrathin FM films. The combination of OISTR with ultrathin materials paves the way for next-generation petahertz optospintronics.

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