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Ultrafast spontaneous exciton dissociation via phonon emission in BiVO4

Stephen E. Gant1,2, Antonios M. Alvertis3, Christopher J. N. Coveney4, Jonah B. Haber5, Marina R. Filip4, and Jeffrey B. Neaton1,2,6

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Phys. Rev. Research 8, 013105 – Published 30 January, 2026

DOI: https://doi.org/10.1103/xm7z-v1ks

Abstract

Monoclinic bismuth vanadate (m−BiVO4) is a promising indirect band gap semiconductor for photoelectrochemical water splitting, yet the characteristics of its low-lying photoexcitations, or excitons, remain poorly understood. Here, we use an ab initio Bethe-Salpeter equation approach that incorporates phonon screening to compute the nature and lifetimes of the low-lying excitons of m−BiVO4. Our calculations indicate that at 0 K, the lowest-lying exciton energy exceeds the indirect band gap, enabling spontaneous dissociation into free carriers via phonon emission within picoseconds. At 300 K, both phonon emission and absorption effects reduce this timescale to only a few femtoseconds. Phonon screening also greatly reduces the binding energy of the lowest-lying exciton, leading to an optical absorption spectrum that better reproduces experimental measurements. Overall, our findings establish the general conditions under which phonon emission-driven exciton dissociation can occur in indirect gap semiconductors, and they emphasize the critical role phonon screening can play in predictive calculations of photophysical properties of complex materials.

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Phys. Rev. Research 8, 013105– Published 30 January, 2026
  • Received 31 March 2025
  • Accepted 9 December 2025
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