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Orbital Hall effect from orbital magnetic moments of Bloch states: The role of a new correction term

Tarik P. Cysne1,*, Ivo Souza2,3, and Tatiana G. Rappoport4,5,6

  • *Contact author: tarik.cysne@gmail.com
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Phys. Rev. Research 8, 033086 – Published 22 July, 2026

DOI: https://doi.org/10.1103/xflp-2y1c

Abstract

We present a rigorous derivation of the matrix elements of the orbital magnetic moment (OMM) of Bloch states. Our calculations include the Berry connection term in the k-derivatives of Bloch states, which was omitted in previous works. The resulting formula for the OMM matrix elements applies to any nondegenerate Bloch states within Hilbert space. We identify two new contributions: The first restores gauge covariance for nondegenerate states, while the second, being itself gauge covariant, can provide significant quantitative corrections depending on the system under study. We examine their impact on the orbital Hall effect in two bilayer systems: a 2H transition metal dichalcogenide bilayer and a biased bilayer graphene. In both cases, these new terms reduce the orbital Hall conductivity plateau compared with results that neglect them, suggesting that multilayered van der Waals materials may be particularly susceptible to the derived OMM corrections. Our findings may contribute to the formal understanding of electronic OMM transport and to the conceptual foundations of the emerging field of orbitronics.

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Phys. Rev. Research 8, 033086– Published 22 July, 2026
  • Received 17 November 2025
  • Accepted 12 March 2026
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