Reuse & Permissions

It is not necessary to obtain permission to reuse this article or its components as it is available under the terms of the Creative Commons Attribution 4.0 International license. This license permits unrestricted use, distribution, and reproduction in any medium, provided attribution to the author(s) and the published article's title, journal citation, and DOI are maintained. Please note that some figures may have been included with permission from other third parties. It is your responsibility to obtain the proper permission from the rights holder directly for these figures.

Export citation

Export citation

Choose format for download:

Download Citation
  • Open Access

Effects of strain on the stability of the metallic rutile and insulating M1 phases of vanadium dioxide

Peter Mlkvik*, Lena Geistlich, Nicola A. Spaldin, and Claude Ederer†

  • Materials Theory, Department of Materials, ETH Zürich, Wolfgang-Pauli-Strasse 27, 8093 Zürich, Switzerland

  • *Contact author: peter.mlkvik@mat.ethz.ch
  • †Contact author: claude.ederer@mat.ethz.ch

Phys. Rev. Research 8, 023003 – Published 1 April, 2026

DOI: https://doi.org/10.1103/rhdm-rdgd

Abstract

We present a systematic density-functional theory study of the effects of strain on the structural and electronic properties in vanadium dioxide (VO2), with particular emphasis on its effect on the relative stability of the metallic rutile and the insulating monoclinic M1 phases. We consider various strain conditions that can be related to epitaxial strain present in VO2 films grown on different lattice planes. Our calculations confirm the dominant role of c-axis strain, i.e., along the direction of the V-V dimerization in the M1 phase. Our analysis suggests that this effect stems primarily from the weakening of the lattice stiffness, with the hopping amplitude along the c axis playing a minor role. We also confirm that, in strain scenarios that deform the basal plane, the c-axis strain still has a dominant effect on the phase stability.

View figure in article

Physics Subject Headings (PhySH)

Article Text

References (53)

  1. Z. Yang, C. Ko, and S. Ramanathan, Oxide electronics utilizing ultrafast metal-insulator transitions, Annu. Rev. Mater. Res. 41, 337 (2011).
  2. K. Liu, S. Lee, S. Yang, O. Delaire, and J. Wu, Recent progresses on physics and applications of vanadium dioxide, Mater. Today 21, 875 (2018).
  3. R. Shi, N. Shen, J. Wang, W. Wang, A. Amini, N. Wang, and C. Cheng, Recent advances in fabrication strategies, phase transition modulation, and advanced applications of vanadium dioxide, Appl. Phys. Rev. 6, 011312 (2019).
  4. Y. Xue and S. Yin, Element doping: A marvelous strategy for pioneering the smart applications of VO2, Nanoscale 14, 11054 (2022).
  5. J. Cao, Y. Gu, W. Fan, L. Q. Chen, D. F. Ogletree, K. Chen, N. Tamura, M. Kunz, C. Barrett, J. Seidel, and J. Wu, Extended mapping and exploration of the vanadium dioxide stress-temperature phase diagram, Nano Lett. 10, 2667 (2010).
  6. J. M. Atkin, S. Berweger, E. K. Chavez, M. B. Raschke, J. Cao, W. Fan, and J. Wu, Strain and temperature dependence of the insulating phases of VO2 near the metal-insulator transition, Phys. Rev. B 85, 020101(R) (2012).
  7. Z. Shao, X. Cao, H. Luo, and P. Jin, Recent progress in the phase-transition mechanism and modulation of vanadium dioxide materials, NPG Asia Mater. 10, 581 (2018).
  8. V. Eyert, The metal-insulator transitions of VO2: A band theoretical approach, Ann. Phys. 514, 650 (2002).
  9. J. B. Goodenough, The two components of the crystallographic transition in VO2, J. Solid State Chem. 3, 490 (1971).
  10. J. P. Pouget, H. Launois, J. P. D’Haenens, P. Merenda, and T. M. Rice, Electron localization induced by uniaxial stress in pure VO2, Phys. Rev. Lett. 35, 873 (1975).
  11. A. Zylbersztejn and N. F. Mott, Metal-insulator transition in vanadium dioxide, Phys. Rev. B 11, 4383 (1975).
  12. R. M. Wentzcovitch, W. W. Schulz, and P. B. Allen, VO2: Peierls or Mott-Hubbard? A view from band theory, Phys. Rev. Lett. 72, 3389 (1994).
  13. T. M. Rice, H. Launois, and J. P. Pouget, Comment on “VO2: Peierls or Mott-Hubbard? A view from band theory”, Phys. Rev. Lett. 73, 3042 (1994).
  14. S. Biermann, A. Poteryaev, A. I. Lichtenstein, and A. Georges, Dynamical singlets and correlation-assisted Peierls transition in VO2, Phys. Rev. Lett. 94, 026404 (2005).
  15. C. Weber, D. D. O’Regan, N. D. M. Hine, M. C. Payne, G. Kotliar, and P. B. Littlewood, Vanadium dioxide: A Peierls-Mott insulator stable against disorder, Phys. Rev. Lett. 108, 256402 (2012).
  16. W. H. Brito, M. C. O. Aguiar, K. Haule, and G. Kotliar, Metal-insulator transition in VO2: A DFT + DMFT perspective, Phys. Rev. Lett. 117, 056402 (2016).
  17. Y. Chen, S. Zhang, F. Ke, C. Ko, S. Lee, K. Liu, B. Chen, J. W. Ager, R. Jeanloz, V. Eyert, and J. Wu, Pressure–temperature phase diagram of vanadium dioxide, Nano Lett. 17, 2512 (2017).
  18. Y. A. Birkhölzer, K. Sotthewes, N. Gauquelin, L. Riekehr, D. Jannis, E. van der Minne, Y. Bu, J. Verbeeck, H. J. W. Zandvliet, G. Koster, and G. Rijnders, High-strain-induced local modification of the electronic properties of VO2 thin films, ACS Appl. Electron. Mater. 4, 6020 (2022).
  19. S. Zhang, J. Y. Chou, and L. J. Lauhon, Direct correlation of structural domain formation with the metal insulator transition in a VO2 nanobeam, Nano Lett. 9, 4527 (2009).
  20. J. Cao, E. Ertekin, V. Srinivasan, W. Fan, S. Huang, H. Zheng, J. W. L. Yim, D. R. Khanal, D. F. Ogletree, J. C. Grossman, and J. Wu, Strain engineering and one-dimensional organization of metal–insulator domains in single-crystal vanadium dioxide beams, Nat. Nanotechnol. 4, 732 (2009).
  21. J. H. Park, J. M. Coy, T. S. Kasirga, C. Huang, Z. Fei, S. Hunter, and D. H. Cobden, Measurement of a solid-state triple point at the metal–insulator transition in VO2, Nature (London) 500, 431 (2013).
  22. H. Asayesh-Ardakani, A. Nie, P. M. Marley, Y. Zhu, P. J. Phillips, S. Singh, F. Mashayek, G. Sambandamurthy, K.-b. Low, R. F. Klie, S. Banerjee, G. M. Odegard, and R. Shahbazian-Yassar, Atomic origins of monoclinic-tetragonal (rutile) phase transition in doped VO2 nanowires, Nano Lett. 15, 7179 (2015).
  23. Y. Muraoka and Z. Hiroi, Metal–insulator transition of VO2 thin films grown on TiO2 (001) and (110) substrates, Appl. Phys. Lett. 80, 583 (2002).
  24. T.-H. Yang, R. Aggarwal, A. Gupta, H. Zhou, R. J. Narayan, and J. Narayan, Semiconductor-metal transition characteristics of VO2 thin films grown on c- and r-sapphire substrates, J. Appl. Phys. 107, 053514 (2010).
  25. N. B. Aetukuri, A. X. Gray, M. Drouard, M. Cossale, L. Gao, A. H. Reid, R. Kukreja, H. Ohldag, C. A. Jenkins, E. Arenholz, K. P. Roche, H. A. Dürr, M. G. Samant, and S. S. P. Parkin, Control of the metal–insulator transition in vanadium dioxide by modifying orbital occupancy, Nat. Phys. 9, 661 (2013).
  26. N. F. Quackenbush, J. W. Tashman, J. A. Mundy, S. Sallis, H. Paik, R. Misra, J. A. Moyer, J.-H. Guo, D. A. Fischer, J. C. Woicik, D. A. Muller, D. G. Schlom, and L. F. J. Piper, Nature of the metal insulator transition in ultrathin epitaxial vanadium dioxide, Nano Lett. 13, 4857 (2013).
  27. N. F. Quackenbush, H. Paik, M. J. Wahila, S. Sallis, M. E. Holtz, X. Huang, A. Ganose, B. J. Morgan, D. O. Scanlon, Y. Gu, F. Xue, et al., Stability of the M2 phase of vanadium dioxide induced by coherent epitaxial strain, Phys. Rev. B 94, 085105 (2016).
  28. D. Lee, J. Lee, K. Song, F. Xue, S.-Y. Choi, Y. Ma, J. Podkaminer, D. Liu, S.-C. Liu, B. Chung, W. Fan, S. J. Cho, W. Zhou, J. Lee, L.-Q. Chen, S. H. Oh, Z. Ma, and C.-B. Eom, Sharpened VO2 phase transition via controlled release of epitaxial strain, Nano Lett. 17, 5614 (2017).
  29. S. Fischer, J.-O. Krisponeit, M. Foerster, L. Aballe, J. Falta, and J. I. Flege, Massively strained VO2 thin film growth on RuO2, Cryst. Growth Des. 20, 2734 (2020).
  30. D. Lee, T. Min, J. Kim, S. Song, J. Lee, H. Kang, J. Lee, D.-Y. Cho, J. Lee, J. H. Jang, and S. Park, Octahedral symmetry modification induced orbital occupancy variation in VO2, J. Phys. Chem. Lett. 13, 75 (2022).
  31. B. Lazarovits, K. Kim, K. Haule, and G. Kotliar, Effects of strain on the electronic structure of VO2, Phys. Rev. B 81, 115117 (2010).
  32. H. Lu, S. Clark, Y. Guo, and J. Robertson, Modelling the enthalpy change and transition temperature dependence of the metal–insulator transition in pure and doped vanadium dioxide, Phys. Chem. Chem. Phys. 22, 13474 (2020).
  33. P. Mlkvik, C. Ederer, and N. A. Spaldin, Influence of germanium substitution on the structural and electronic stability of the competing vanadium dioxide phases, Phys. Rev. Res. 4, 043129 (2022).
  34. Y. Zhang, D. Ke, J. Wu, C. Zhang, L. Hou, B. Lin, Z. Chen, J. P. Perdew, and J. Sun, Challenges for density functional theory in simulating metal–metal singlet bonding: A case study of dimerized VO2, J. Chem. Phys. 160, 134101 (2024).
  35. B. Stahl and T. Bredow, Critical assessment of the DFT + U approach for the prediction of vanadium dioxide properties, J. Comput. Chem. 41, 258 (2020).
  36. P. Mlkvik, M. E. Merkel, N. A. Spaldin, and C. Ederer, Single-site DFT + DMFT for vanadium dioxide using bond-centered orbitals, Phys. Rev. Res. 6, 033122 (2024).
  37. L. Haas, P. Mlkvik, N. A. Spaldin, and C. Ederer, Incorporating static intersite correlation effects in vanadium dioxide through DFT + V, Phys. Rev. Res. 6, 043177 (2024).
  38. V. Leiria Campo, Jr. and M. Cococcioni, Extended DFT + U+V method with on-site and inter-site electronic interactions, J. Phys.: Condens. Matter 22, 055602 (2010).
  39. J. M. Tomczak and S. Biermann, Effective band structure of correlated materials: the case of VO2, J. Phys.: Condens. Matter 19, 365206 (2007).
  40. J. M. Tomczak, F. Aryasetiawan, and S. Biermann, Effective bandstructure in the insulating phase versus strong dynamical correlations in metallic VO2, Phys. Rev. B 78, 115103 (2008).
  41. J. M. Tomczak and S. Biermann, Optical properties of correlated materials: Generalized Peierls approach and its application to VO2, Phys. Rev. B 80, 085117 (2009).
  42. A. S. Belozerov, M. A. Korotin, V. I. Anisimov, and A. I. Poteryaev, Monoclinic M1 phase of VO2: Mott-Hubbard versus band insulator, Phys. Rev. B 85, 045109 (2012).
  43. Z. He and A. J. Millis, Photoinduced phase transitions in narrow-gap Mott insulators: The case of VO2, Phys. Rev. B 93, 115126 (2016).
  44. J. P. Perdew, K. Burke, and M. Ernzerhof, Generalized gradient approximation made simple, Phys. Rev. Lett. 77, 3865 (1996).
  45. I. Timrov, N. Marzari, and M. Cococcioni, HP—A code for the calculation of Hubbard parameters using density-functional perturbation theory, Comput. Phys. Commun. 279, 108455 (2022).
  46. J. Hubbard, Electron correlations in narrow energy bands, Proc. R. Soc. Lond. Ser. Math. Phys. Sci. 276, 238 (1963).
  47. P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. L. Chiarotti, M. Cococcioni, I. Dabo, et al., QUANTUM ESPRESSO: A modular and open-source software project for quantum simulations of materials, J. Phys.: Condens. Matter 21, 395502 (2009).
  48. P. Giannozzi, O. Andreussi, T. Brumme, O. Bunau, M. Buongiorno Nardelli, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, M. Cococcioni, N. Colonna, I. Carnimeo, A. Dal Corso, S. de Gironcoli, P. Delugas, R. A. DiStasio, A. Ferretti, A. Floris, G. Fratesi, G. Fugallo, et al., Advanced capabilities for materials modelling with Quantum ESPRESSO, J. Phys.: Condens. Matter 29, 465901 (2017).
  49. K. F. Garrity, J. W. Bennett, K. M. Rabe, and D. Vanderbilt, Pseudopotentials for high-throughput DFT calculations, Comput. Mater. Sci. 81, 446 (2014).
  50. A. A. Mostofi, J. R. Yates, G. Pizzi, Y.-S. Lee, I. Souza, D. Vanderbilt, and N. Marzari, An updated version of wannier90: A tool for obtaining maximally-localised Wannier functions, Comput. Phys. Commun. 185, 2309 (2014).
  51. G. Pizzi, V. Vitale, R. Arita, S. Blügel, F. Freimuth, G. Géranton, M. Gibertini, D. Gresch, C. Johnson, T. Koretsune, J. Ibañez-Azpiroz, H. Lee, J.-M. Lihm, D. Marchand, A. Marrazzo, Y. Mokrousov, J. I. Mustafa, Y. Nohara, Y. Nomura, L. Paulatto, et al., Wannier90 as a community code: new features and applications, J. Phys.: Condens. Matter 32, 165902 (2020).
  52. W. P. Su, J. R. Schrieffer, and A. J. Heeger, Soliton excitations in polyacetylene, Phys. Rev. B 22, 2099 (1980).
  53. P. Mlkvik, L. Geistlich, N. A. Spaldin, and C. Ederer, Effects of strain on the stability of the metallic rutile and insulating M1 phases of vanadium dioxide, Materials Cloud Archive (2026), https://doi.org/10.24435/materialscloud:bt-ah.

Outline

Information

Sign In to Your Journals Account

Filter

Filter

Article Lookup

Enter a citation