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Straintronics and twistronics in bilayer graphene

Federico Escudero1,*, Dong Wang2,*, Pierre A. Pantaleón1, Shengjun Yuan2,3,4, Francisco Guinea1,5, and Zhen Zhan1,†

  • 1IMDEA Nanoscience, Faraday 9, Madrid 28049, Spain
  • 2Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China
  • 3School of Artificial Intelligence, Wuhan University, Wuhan 430072, China
  • 4Wuhan Institute of Quantum Technology, Wuhan 430206, China
  • 5Donostia International Physics Center, Paseo Manuel de Lardizábal 4, San Sebastián 20018, Spain

  • *These authors contributed equally to this work.
  • †Contact author: zhenzhanh@gmail.com

Phys. Rev. Research 8, 023225 – Published 29 May, 2026

DOI: https://doi.org/10.1103/r8sv-6xmp

Abstract

The interplay of twist and strain in bilayer graphene enables the formation of moiré patterns and narrow bands that host correlated and topological phases. While magic-angle twisted bilayer graphene has been widely studied, strain provides an additional and realistic control knob for band engineering. In this work, we first generate a global method to construct commensurate supercells for arbitrary twist and heterostrain. Then, using atomistic tight-binding and strain-extended continuum models to study the commensurate structures, we identify configurations that minimize the bandwidth beyond the magic angle. The results reveal a strong dependence of band narrowing and topology on strain type, magnitude, direction, and lattice relaxation. Particularly, shear strain produces a stronger distortion than uniaxial strain. Including electron-electron interactions through a self-consistent Hartree potential shows that strain broadens the bare bands while reducing electrostatic renormalization. Strain also drives topological transitions as the narrow and remote bands hybridize, establishing twisted and strained bilayer graphene as a tunable platform for flat-band and topological phenomena.

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