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Enhancement of electric drive in silicon quantum dots with electric quadrupole spin resonance

Philip Y. Mai1,2,*, Pedro H. Pereira3,*, Lucas Andrade Alonso3,*, Ross C. C. Leon1,†, Chih Hwan Yang1,2, Jason C. C. Hwang1, Daniel Dunmore1, Julien Camirand Lemyre4, Tuomo Tanttu1,2 et al.

Wister Huang1,‡, Kok Wai Chan1,2, Kuan Yen Tan1,§, Jesús D. Cifuentes1,2, Fay E. Hudson1,2, Kohei M. Itoh5, Arne Laucht1,2, Michel Pioro-Ladrière4,6, Christopher C. Escott1,2, Andrew Dzurak1,2, Andre Saraiva1,2, Reinaldo de Melo e Souza3, and MengKe Feng1,2,∥

  • *These authors contributed equally to this work.
  • †Present address: Quantum Motion, 9 Sterling Way, London N7 9HJ, United Kingdom.
  • ‡Present address: Laboratory for Solid State Physics, ETH Zurich, CH-8093 Zurich, Switzerland.
  • §Present address: IQM Quantum Computers, Espoo 02150, Finland.
  • ∥Contact author: mengke.feng@unsw.edu.au

Phys. Rev. Research 7, 043134 – Published 5 November, 2025

DOI: https://doi.org/10.1103/gk5h-l7q4

Abstract

Quantum computation with electron spin qubits requires coherent and efficient manipulation of these spins, typically accomplished through the application of alternating magnetic or electric fields for electron spin resonance. In particular, electrical driving allows us to apply localized fields on the electrons, which benefits scale-up architectures. However, we have found that Electric Dipole Spin Resonance is insufficient for modeling the Rabi behavior in recent experimental studies. Therefore, we propose that the electron spin is being driven by a method of electric spin qubit control that generalizes the spin dynamics by taking into account a quadrupolar contribution of the quantum dot: electric quadrupole spin resonance. In this work, we explore the electric quadrupole driving of a quantum dot in silicon, specifically examining the cases of 5 and 13 electron occupancies.

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