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In situ control of hole-spin driving mechanisms

Simon Geyer1,*, Rafael S. Eggli1,*, Carlos Dos Santos1, Miguel J. Carballido1,†, Peter Stano2,3, Daniel Loss1,2,‡, Dominik M. Zumbühl1, Richard J. Warburton1, and Andreas V. Kuhlmann1,§

  • *These authors contributed equally to this work.
  • †Present address: School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW 2052, Australia.
  • ‡Present address: Physics Department, King Fahd University of Petroleum and Minerals (KFUPM), 31261 Dhahran, Saudi Arabia; Center for Advanced Quantum Computing, KFUPM, Dhahran, Saudi Arabia; and RDIA Chair in Quantum Computing.
  • §Contact author: andreas.kuhlmann@unibas.ch
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Phys. Rev. Research 8, 033341 – Published 21 September, 2026

DOI: https://doi.org/10.1103/f1hx-nk4s

Abstract

Hole-spin qubits enable fast, all-electrical spin manipulation through electric-dipole spin resonance (EDSR), arising from two microscopic mechanisms rooted in their intrinsically strong spin-orbit interaction. Depending on how the electric field acts on the quantum dot, the spin can be driven either by a modulation of its g factor or by a displacement of the wavefunction. Here, we demonstrate in situ control over the dominant EDSR driving mechanism of a hole-spin qubit in a silicon fin field-effect transistor by applying microwave signals to two different gate electrodes, thereby tuning the orientation of the local electric field. We measure the effective g factor, its electrical tunability, and the Rabi frequency as functions of magnetic-field orientation. Their distinct angular dependencies, analyzed using a g-matrix formalism, allow us to identify the underlying driving processes and track their relative contributions for different drive configurations. By selecting the drive electrode, we can switch from a regime dominated by g-factor modulation to one with a strong contribution from wavefunction displacement. This in situ tunability provides direct experimental access to both spin-driving mechanisms and offers a route toward optimized spin-qubit performance.

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Phys. Rev. Research 8, 033341– Published 21 September, 2026
  • Received 22 December 2025
  • Accepted 6 August 2026
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