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  • Letter
  • Open Access

180 °-twisted bilayer ReSe2 as an artificial noncentrosymmetric semiconductor

S. Akatsuka1, M. Sakano1, T. Yamamoto1, T. Nomoto2, R. Arita2,3, R. Murata4, T. Sasagawa4, K. Watanabe5, T. Taniguchi6 et al.

N. Mitsuishi3, M. Kitamura7,8, K. Horiba8, K. Sugawara9,10, S. Souma9, T. Sato9, H. Kumigashira11, K. Shinokita12, H. Wang12, K. Matsuda12, S. Masubuchi13, T. Machida13, and K. Ishizaka1,3

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Phys. Rev. Research 6, L022048 – Published 3 June, 2024

DOI: https://doi.org/10.1103/PhysRevResearch.6.L022048

Abstract

We have fabricated a 180 °-twisted bilayer ReSe2 by stacking two centrosymmetric monolayer ReSe2 flakes in opposite directions, which is expected to cause the loss of spatial inversion symmetry. We successfully observed spatial inversion-symmetry breaking, in contrast to the monolayer and natural bilayer ReSe2 by the second harmonic generation. ARPES measurements further revealed emergent band dispersions in the 180 °-twisted bilayer ReSe2, distinct from those of the monolayer ReSe2 used in its fabrication. The band calculation shows the finite lifting of spin degeneracy (∼50 meV) distinct from natural monolayer and bilayer ReSe2, which demonstrates that the spin-momentum locked state leading to Berry curvature related phenomena can be realized even with the stacking of centrosymmetric monolayers.

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Information

Phys. Rev. Research 6, L022048– Published 3 June, 2024
  • Received 24 September 2023
  • Revised 4 February 2024
  • Accepted 25 April 2024
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