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  • Letter
  • Open Access

Magnetic proximity-induced superconducting diode effect and infinite magnetoresistance in a van der Waals heterostructure

Jonginn Yun1,*, Suhan Son1,2,*, Jeacheol Shin1,*, Giung Park1,2, Kaixuan Zhang1,2, Young Jae Shin3, Je-Geun Park1,2,†, and Dohun Kim1,‡

  • 1Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
  • 2Center for Quantum Materials, Seoul National University, Seoul 08826, Korea
  • 3SC Devices, PsiQuantum, Palo Alto, California, 94304, USA

  • *These authors contributed equally to this work.
  • †Corresponding author: jgpark10@snu.ac.kr
  • ‡Corresponding author: dohunkim@snu.ac.kr

Phys. Rev. Research 5, L022064 – Published 23 June, 2023

DOI: https://doi.org/10.1103/PhysRevResearch.5.L022064

Abstract

We report unidirectional charge transport in a NbSe2 noncentrosymmetric superconductor that is exchange-coupled with a CrPS4 van der Waals layered antiferromagnetic insulator. The NbSe2/CrPS4 bilayer device exhibits bias-dependent superconducting critical-current variations of up to 16%, with magnetochiral anisotropy reaching ∼105T–1A–1. Furthermore, the CrPS4/NbSe2/CrPS4 spin-valve structure exhibits the superconducting diode effect with critical-current variations of up to 40%. We also utilize the magnetic proximity effect to induce switching in the superconducting state of the spin-valve structure. Finally, it exhibits an infinite magnetoresistance ratio depending on the field sweep direction and magnetization configuration. Our result demonstrates a novel route for enhancing the nonreciprocal response in the weak external field regime (<50mT) by exploiting the magnetic proximity effect.

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